Performance Enhancement by Gate Tunable Strain in p-type Piezoelectric FinFETs

2018 ◽  
Author(s):  
Yuxiong Long ◽  
Hongjuan Wang ◽  
Jun Z. Huang ◽  
Jian Gong ◽  
Xiangwei Jiang
Keyword(s):  
Performance Enhancement ◽  
P Type

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Microwave and furnace annealing in oxygen ambient for performance enhancement of p-Type SnO thin-film transistors

2021 ◽  
Author(s):  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Shih-Ho Chang ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Visible Region ◽  
Annealing Process ◽  
Defect States ◽  
Furnace Annealing ◽  
P Type ◽  
Low Thermal Budget ◽  
New Generation

Abstract In this study, we investigated the effect of microwave-irradiation annealing (MWA) and thermal furnace annealing (FA) in oxygen ambient on the active channel layer of p-type tin-oxide (SnO) thin-film transistors (TFTs). At very low source-drain voltage of -0.1 V, the MWA at 1200 W and FA at 300 °C samples have exhibited significant improvement in the electrical characteristics such as subthreshold swing (SS) of 0.93 and 0.485 V/dec, the Ion/Ioff ratio of 1.65 x 104and 3.07 x 104, the field-effect mobility (μFE) of 0.16 and 0.26 cm2/V·s and ultra-low off-state current of 1.9 pA and 2.0 pA respectively. The observed performance enhancement was mainly attributed to the reduction of interface trap density (Nt) by tuning the power of MWA and optimizing the temperature in FA. From the result, we observed the optical band gap (Eg) increased by 6% in FA, and 12% in MWA, which confirms improved crystallinity and reduction of defect states. Additionally, a low thermal budget microwave anneal process has shown high transmittance of more than 86% in the visible region (380-700 nm). The physical characterization indicates the partial phase transformation of SnO to SnO2 with retaining p-type conductivity in both annealing process. The results demonstrate that both the annealing process could be highly promising to be used in the complementary logic circuits of new generation flexible/transparent displays.

Thermoelectric Performance Enhancement of CeFe4Sb12 p-Type Skutterudite by Disorder on the Sb4 Rings Induced by Te Doping and Nanopores

2015 ◽  
Vol 45 (3) ◽  
pp. 1240-1244 ◽  
Author(s):  
Liangwei Fu ◽  
Junyou Yang ◽  
Qinghui Jiang ◽  
Ye Xiao ◽  
Yubo Luo ◽  
...  
Keyword(s):  
Performance Enhancement ◽  
Thermoelectric Performance ◽  
P Type

scholarly journals Transparent p-Type Semiconductors: Copper-Based Oxides and Oxychalcogenides

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 137 ◽  
Author(s):  
Nengduo Zhang ◽  
Jian Sun ◽  
Hao Gong
Keyword(s):  
Performance Enhancement ◽  
Basic Material ◽  
Transparent Electronics ◽  
Co Doping ◽  
Transparent Conducting ◽  
Current Review ◽  
Conducting Materials ◽  
Device Applications ◽  
Transparent Conducting Materials ◽  
P Type

While p-type transparent conducting materials (TCMs) are crucial for many optoelectronic applications, their performance is still not satisfactory. This has impeded the development of many devices such as photovoltaics, sensors, and transparent electronics. Among the various p-type TCMs proposed so far, Cu-based oxides and oxychalcogenides have demonstrated promising results in terms of their optical and electrical properties. Hence, they are the focus of this current review. Their basic material properties, including their crystal structures, conduction mechanisms, and electronic structures will be covered, as well as their device applications. Also, the development of performance enhancement strategies including doping/co-doping, annealing, and other innovative ways to improve conductivity will be discussed in detail.

Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping

2008 ◽  
Vol 92 (24) ◽  
pp. 241103 ◽  
Author(s):  
C. Bayram ◽  
J. L. Pau ◽  
R. McClintock ◽  
M. Razeghi
Keyword(s):  
Performance Enhancement ◽  
Avalanche Photodiodes ◽  
P Type

Performance enhancement of blue light-emitting diodes by using special designed n and p-type doped barriers

2015 ◽  
Vol 85 ◽  
pp. 454-460 ◽  
Author(s):  
Jing Li ◽  
Zhiyou Guo ◽  
Fangzheng Li ◽  
Hong Lin ◽  
Chu Li ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Performance Enhancement ◽  
Light Emitting ◽  
P Type
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