Concept of Strain-Transfer-Layer and Integration with Graded Silicon–Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement

2008 ◽  
Vol 47 (4) ◽  
pp. 2551-2555
Author(s):  
Grace Huiqi Wang ◽  
Eng-Huat Toh ◽  
Chih-Hang Tung ◽  
Sudhinranjan Tripathy ◽  
Ganesh S. Samudra ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Performance Enhancement ◽  
Transfer Layer ◽  
Strain Transfer ◽  
Effect Transistor ◽  
P Type

High-transconductance p-type SiGe modulation-doped field-effect transistor

1995 ◽  
Vol 31 (8) ◽  
pp. 680 ◽  
Author(s):  
M. Arafa ◽  
K. Ismail ◽  
P. Fay ◽  
J.O. Chu ◽  
B.S. Meyerson ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
P Type

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Investigation of performance enhancement in InAs/InGaAs heterojunction-enhanced N-channel tunneling field-effect transistor

2015 ◽  
Vol 88 ◽  
pp. 90-98 ◽  
Author(s):  
Genquan Han ◽  
Bin Zhao ◽  
Yan Liu ◽  
Hongjuan Wang ◽  
Mingshan Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Performance Enhancement ◽  
Effect Transistor

scholarly journals Electronic Sensing Platform (ESP) Based on Open-Gate Junction Field-Effect Transistor (OG-JFET) for Life Science Applications: Design, Modeling and Experimental Results

Sensors ◽  
2021 ◽  
Vol 21 (22) ◽  
pp. 7491
Author(s):  
Abbas Panahi ◽  
Deniz Sadighbayan ◽  
Ebrahim Ghafar-Zadeh
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Comsol Multiphysics ◽  
Subtle Difference ◽  
Back Gate ◽  
Sensing Platform ◽  
Type Layer ◽  
Type Contact ◽  
Effect Transistor ◽  
P Type

This paper presents a new field-effect sensor called open-gate junction gate field-effect transistor (OG-JFET) for biosensing applications. The OG-JFET consists of a p-type channel on top of an n-type layer in which the p-type serves as the sensing conductive layer between two ohmic contacted sources and drain electrodes. The structure is novel as it is based on a junction field-effect transistor with a subtle difference in that the top gate (n-type contact) has been removed to open the space for introducing the biomaterial and solution. The channel can be controlled through a back gate, enabling the sensor’s operation without a bulky electrode inside the solution. In this research, in order to demonstrate the sensor’s functionality for chemical and biosensing, we tested OG-JFET with varying pH solutions, cell adhesion (human oral neutrophils), human exhalation, and DNA molecules. Moreover, the sensor was simulated with COMSOL Multiphysics to gain insight into the sensor operation and its ion-sensitive capability. The complete simulation procedures and the physics of pH modeling is presented here, being numerically solved in COMSOL Multiphysics software. The outcome of the current study puts forward OG-JFET as a new platform for biosensing applications.

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