Static and dynamic characterization of silicon carbide bipolar junction transistor

2004 ◽  
Author(s):  
A. Claudio ◽  
Hongfang Wang ◽  
A.Q. Huang ◽  
A.K. Agarwal
Keyword(s):  
Silicon Carbide ◽  
Dynamic Characterization ◽  
Bipolar Junction Transistor ◽  
Junction Transistor

Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures

2014 ◽  
Vol 778-780 ◽  
pp. 1013-1016 ◽  
Author(s):  
Nuo Zhang ◽  
Yi Rao ◽  
Nuo Xu ◽  
Ayden Maralani ◽  
Albert P. Pisano
Keyword(s):  
Silicon Carbide ◽  
High Temperatures ◽  
Elevated Temperatures ◽  
Current Gain ◽  
Voltage Gain ◽  
Bipolar Junction Transistor ◽  
Voltage Amplifier ◽  
Junction Transistor ◽  
Comprehensive Characterization

In this work, a 4H-Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) capable of operating at high temperatures up to 673 K is demonstrated. Comprehensive characterization including current gain, early voltage, and intrinsic voltage gain was performed. At elevated temperatures, although the current gain of the device is reduced, the intrinsic voltage gain increases to 5900 at 673 K, suggesting 4H-SiC BJT has the potential to be used as a voltage amplifier at extremely high temperatures.

Static and Dynamic Characterization of High Power Silicon Carbide BJT Modules

2016 ◽  
Vol 52 (6) ◽  
pp. 4990-4998 ◽  
Author(s):  
Muhammad Nawaz ◽  
Nan Chen ◽  
Filippo Chimento ◽  
Liwei Wang
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Dynamic Characterization

The characterization of the built-in bipolar junction transistor in H-gate PD-SOI NMOS

2020 ◽  
pp. 107919
Author(s):  
Huilong Zhu ◽  
Dawei Bi ◽  
Xin Xie ◽  
Zhiyuan Hu ◽  
Chunmei Liu ◽  
...  
Keyword(s):  
Bipolar Junction Transistor ◽  
Junction Transistor

Advanced FIB CE Combined with Static Analysis for Functional Failure Analysis

2013 ◽  
Author(s):  
S.K. Loh ◽  
C.Q. Chen ◽  
K.H. Yip ◽  
A.C.T. Quah ◽  
X. Tao ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Static Analysis ◽  
Electrical Behavior ◽  
Functional Failure ◽  
Bipolar Junction Transistor ◽  
Root Cause ◽  
Soft Failure ◽  
Junction Transistor ◽  
Special Challenge

Abstract It is difficult to simulate functional failures using static analysis tools, therefore, debugging and troubleshooting devices with functional failures present a special challenge for failure analysis (FA) work and often result in a root-cause success rate is quite low. In this paper, the application of advanced FIB circuit edit (CE) processes combined the static FA analysis yielded successful localization of a bipolar junction transistor (BJT) device soft failure. Additional FA techniques were incorporated within the FA flow, resulting in characterization of the electrical behavior of a suspected transistor and detection of an abnormal implant profile within the active area.

AN EFFICIENT SPICE-BASED TECHNIQUE FOR PERFORMANCE CHARACTERIZATION OF BJT MIXERS

2010 ◽  
Vol 19 (06) ◽  
pp. 1333-1344 ◽  
Author(s):  
RABIN RAUT ◽  
VIJAY DEVABHAKTUNI ◽  
NILADRI ROY
Keyword(s):  
Radio Frequency ◽  
Equivalent Circuit ◽  
Noise Figure ◽  
Conversion Gain ◽  
Performance Characterization ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Mixer Circuits

In this paper, we present a fast and simple SPICE-based technique for the performance characterization of BJT mixers. First, exploiting fundamental concepts, an AC equivalent circuit of a radio-frequency bipolar junction transistor mixer is derived. Second, this equivalent circuit is used to estimate the conversion gain, noise-figure, and nonlinearity characteristics of the mixer. The proposed technique has been validated using simulations on integrated and discrete transistor based mixer circuits.

Sign in / Sign up

Export Citation Format

Share Document