Advanced FIB CE Combined with Static Analysis for Functional Failure Analysis

2013 ◽  
Author(s):  
S.K. Loh ◽  
C.Q. Chen ◽  
K.H. Yip ◽  
A.C.T. Quah ◽  
X. Tao ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Static Analysis ◽  
Electrical Behavior ◽  
Functional Failure ◽  
Bipolar Junction Transistor ◽  
Root Cause ◽  
Soft Failure ◽  
Junction Transistor ◽  
Special Challenge

Abstract It is difficult to simulate functional failures using static analysis tools, therefore, debugging and troubleshooting devices with functional failures present a special challenge for failure analysis (FA) work and often result in a root-cause success rate is quite low. In this paper, the application of advanced FIB circuit edit (CE) processes combined the static FA analysis yielded successful localization of a bipolar junction transistor (BJT) device soft failure. Additional FA techniques were incorporated within the FA flow, resulting in characterization of the electrical behavior of a suspected transistor and detection of an abnormal implant profile within the active area.

The characterization of the built-in bipolar junction transistor in H-gate PD-SOI NMOS

2020 ◽  
pp. 107919
Author(s):  
Huilong Zhu ◽  
Dawei Bi ◽  
Xin Xie ◽  
Zhiyuan Hu ◽  
Chunmei Liu ◽  
...  
Keyword(s):  
Bipolar Junction Transistor ◽  
Junction Transistor

An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices

1997 ◽  
Author(s):  
E. H. Yeoh ◽  
W. M. Mak ◽  
H. C. Lock ◽  
S. K. Sim ◽  
C. C. Ooi ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Packing Density ◽  
Failure Mechanisms ◽  
Potential Solution ◽  
Critical Dimensions ◽  
Functional Failure ◽  
Analysis Techniques ◽  
Root Cause ◽  
First Time

Abstract As device interconnect layers increase and transistor critical dimensions decrease below sub-micron to cater for higher speed and higher packing density, various new and subtle failure mechanisms have emerged and are becoming increasingly prevalent. Silicon dislocation is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre GFA wafer' functional failure problem. In this paper, several breakthrough failure analysis techniques used to narrow down and identify this new mechanism will be presented. Root cause determination and potential solution to this problem will also be discussed.

Nanoprobing as an Essential and Fast Methodology in Identification of Failure’s Root Cause for Advanced Technology

2013 ◽  
Author(s):  
Yinzhe Ma ◽  
Chong Khiam Oh ◽  
Ohnmar Nyi ◽  
Chuan Zhang ◽  
Donald Nedeau ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Success Rate ◽  
Failure Mechanism ◽  
Turnaround Time ◽  
Advanced Technology ◽  
Electrical Behavior ◽  
Root Cause ◽  
Front End

Abstract This paper highlights the use of nanoprobing as a crucial and fast methodology for failure analysis (FA) in sub 20nm with an improved semi-auto nanoprobing system. Nanoprobing has the capability to localize as well as characterize the electrical behavior of the malfunctioning device for a better understanding of the failure mechanism. It provides a valuable guide to choose a proper physical FA technique to identify the root cause of the failure. This established methodology helps to accelerate the FA turnaround time and improve the success rate. Its application to a few of the front end of line and one back end of line issues is highlighted in the paper.

Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 h

1999 ◽  
Vol 38 (Part 2, No. 8A) ◽  
pp. L851-L853 ◽  
Author(s):  
Seikoh Yoshida ◽  
Joe Suzuki
Keyword(s):  
Bipolar Junction Transistor ◽  
Junction Transistor

AN EFFICIENT SPICE-BASED TECHNIQUE FOR PERFORMANCE CHARACTERIZATION OF BJT MIXERS

2010 ◽  
Vol 19 (06) ◽  
pp. 1333-1344 ◽  
Author(s):  
RABIN RAUT ◽  
VIJAY DEVABHAKTUNI ◽  
NILADRI ROY
Keyword(s):  
Radio Frequency ◽  
Equivalent Circuit ◽  
Noise Figure ◽  
Conversion Gain ◽  
Performance Characterization ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Mixer Circuits

In this paper, we present a fast and simple SPICE-based technique for the performance characterization of BJT mixers. First, exploiting fundamental concepts, an AC equivalent circuit of a radio-frequency bipolar junction transistor mixer is derived. Second, this equivalent circuit is used to estimate the conversion gain, noise-figure, and nonlinearity characteristics of the mixer. The proposed technique has been validated using simulations on integrated and discrete transistor based mixer circuits.

scholarly journals High Aspect Ratio, Vertical Bipolar Junction Transistor NPN Device Fault Isolation & Analysis Techniques

2021 ◽  
Author(s):  
Kevin Distelhurst ◽  
Dan Bader
Keyword(s):  
Aspect Ratio ◽  
Failure Analysis ◽  
Analog Circuits ◽  
High Aspect Ratio ◽  
Analog Circuit ◽  
Fault Isolation ◽  
Nanometer Scale ◽  
Bipolar Junction Transistor ◽  
Performance Improvements ◽  
Junction Transistor

Abstract Analog components are still an important aspect of our society's electronic portfolio. They play a role in the emerging and expanding 5G electronic industry, for instance. The NPN bipolar junction transistor (BJT) is the foundation of many analog circuits and has continually evolved to meet more demanding specifications [1], [2]. Certain embodiments of these NPNs pose difficulties in failure analysis. One such embodiment is a vertical NPN BJT with high aspect ratio dimensions. Specifically, the dimensions involved are nanometer thick NP & PN junctions that extend microns in length. These dimensions provide desired performance improvements but a subtle, nanometer scale defect present anywhere along this length can cause substantial electrical shifts detrimental to an analog circuit. Several simple and complex techniques using common failure analysis tools can isolate these defects as discussed in this paper.

Silicon Dislocation Enhanced by Dynamic Voltage Stress

2007 ◽  
Author(s):  
Yu-Cheng Lin ◽  
Rock Chen ◽  
Sanan Liang ◽  
Scott Liao ◽  
Chorng Niou ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Silicon Substrate ◽  
Reliability Test ◽  
Final Test ◽  
Functional Failure ◽  
Root Cause ◽  
Voltage Stress ◽  
Dynamic Voltage ◽  
Lightly Doped Drain ◽  
The Relationship

Abstract In reliability test some chips suffered functional failure. Through a series of failure analysis experiments, the root cause was determined to be a silicon dislocation across LDD (Lightly Doped Drain) area causing p-n junction leakage. However, those failed samples all passed both CP (Chip Probe) and FT (Final Test) monitor. Therefore, it is reasonable to suspect that DVS (dynamic voltage stress) may enhance minor dislocations already existing before CP and FT. To prove this hypothesis, an experiment was designed to find the relationship between DVS and the depth of dislocation in silicon substrate. In conclusion, DVS could enhance dislocation across LDD area, which may induce reliability failure. Moreover, reliability concerns on this finding will be discussed in this paper.

Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures

2014 ◽  
Vol 778-780 ◽  
pp. 1013-1016 ◽  
Author(s):  
Nuo Zhang ◽  
Yi Rao ◽  
Nuo Xu ◽  
Ayden Maralani ◽  
Albert P. Pisano
Keyword(s):  
Silicon Carbide ◽  
High Temperatures ◽  
Elevated Temperatures ◽  
Current Gain ◽  
Voltage Gain ◽  
Bipolar Junction Transistor ◽  
Voltage Amplifier ◽  
Junction Transistor ◽  
Comprehensive Characterization

In this work, a 4H-Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) capable of operating at high temperatures up to 673 K is demonstrated. Comprehensive characterization including current gain, early voltage, and intrinsic voltage gain was performed. At elevated temperatures, although the current gain of the device is reduced, the intrinsic voltage gain increases to 5900 at 673 K, suggesting 4H-SiC BJT has the potential to be used as a voltage amplifier at extremely high temperatures.

Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer

2012 ◽  
Vol 21 (8) ◽  
pp. 088502 ◽  
Author(s):  
Qian Zhang ◽  
Yu-Ming Zhang ◽  
Lei Yuan ◽  
Yi-Men Zhang ◽  
Xiao-Yan Tang ◽  
...  
Keyword(s):  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Fabrication And Characterization ◽  
Double Base
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