Static and dynamic characterization of high power silicon carbide BJT modules

2014 ◽  
Author(s):  
Muhammad Nawaz ◽  
Nan Chen ◽  
Filippo Chimento ◽  
Liwei Wang
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Dynamic Characterization

Static and Dynamic Characterization of High Power Silicon Carbide BJT Modules

2016 ◽  
Vol 52 (6) ◽  
pp. 4990-4998 ◽  
Author(s):  
Muhammad Nawaz ◽  
Nan Chen ◽  
Filippo Chimento ◽  
Liwei Wang
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Dynamic Characterization

Short Circuit Ruggedness of 600 V SiC Trench JFETs

2020 ◽  
Vol 1004 ◽  
pp. 933-938
Author(s):  
Vinoth Sundaramoorthy ◽  
Lukas Kranz ◽  
Stephan Wirths ◽  
Marco Bellini ◽  
Gianpaolo Romano ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Operating Temperature ◽  
Short Circuit ◽  
Short Circuit Current ◽  
State Resistance ◽  
Resistance Value ◽  
A Current ◽  
Short Circuit Condition

Silicon Carbide JFETs with low on-state resistance are suitable for a number of high power applications. The static, dynamic and short circuit characterization of 600 V SiC Trench JFETs are reported in this paper. Typical JFETs fabricated with a 1.2 μm cell pitch had an on-resistance value around 40 mΩ and blocking voltages of ~600 V across the wafer. JFETs were successfully switched with a dc link voltage of 300 V, a current of 15 A and operating temperature of 125 °C. These JFETs were subjected to a short circuit condition with duration ranging from 10 μs to 45 μs at a dc link voltage of ~300 V, and operating temperatures of 25 °C and 125 °C. The device could withstand subsequent short circuit successfully without any failure at both 25 °C and 125 °C. The short circuit current showed consistent dependency on the applied gate voltage, when it was varied from 0 V to 15 V.

Dynamic Characterization of Parallel-Connected High-Power IGBT Modules

2015 ◽  
Vol 51 (1) ◽  
pp. 539-546 ◽  
Author(s):  
Nan Chen ◽  
Filippo Chimento ◽  
Muhammad Nawaz ◽  
Liwei Wang
Keyword(s):  
High Power ◽  
Dynamic Characterization ◽  
Igbt Modules

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

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