AN EFFICIENT SPICE-BASED TECHNIQUE FOR PERFORMANCE CHARACTERIZATION OF BJT MIXERS

In this paper, we present a fast and simple SPICE-based technique for the performance characterization of BJT mixers. First, exploiting fundamental concepts, an AC equivalent circuit of a radio-frequency bipolar junction transistor mixer is derived. Second, this equivalent circuit is used to estimate the conversion gain, noise-figure, and nonlinearity characteristics of the mixer. The proposed technique has been validated using simulations on integrated and discrete transistor based mixer circuits.

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Performance characterization of screen printed radio frequency identification antennas with silver nanopaste

Thin Solid Films ◽

10.1016/j.tsf.2009.05.019 ◽

2009 ◽

Vol 517 (21) ◽

pp. 6112-6118 ◽

Cited By ~ 84

Author(s):

Dong-Youn Shin ◽

Yongshik Lee ◽

Chung Hwan Kim

Keyword(s):

Radio Frequency ◽

Radio Frequency Identification ◽

Performance Characterization ◽

Frequency Identification ◽

Silver Nanopaste ◽

Screen Printed

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Static and dynamic characterization of silicon carbide bipolar junction transistor

IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468) ◽

10.1109/iecon.2003.1280219 ◽

2004 ◽

Cited By ~ 2

Author(s):

A. Claudio ◽

Hongfang Wang ◽

A.Q. Huang ◽

A.K. Agarwal

Keyword(s):

Silicon Carbide ◽

Dynamic Characterization ◽

Bipolar Junction Transistor ◽

Junction Transistor

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The characterization of the built-in bipolar junction transistor in H-gate PD-SOI NMOS

Solid-State Electronics ◽

10.1016/j.sse.2020.107919 ◽

2020 ◽

pp. 107919

Author(s):

Huilong Zhu ◽

Dawei Bi ◽

Xin Xie ◽

Zhiyuan Hu ◽

Chunmei Liu ◽

...

Keyword(s):

Bipolar Junction Transistor ◽

Junction Transistor

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Advanced FIB CE Combined with Static Analysis for Functional Failure Analysis

ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2013p0424 ◽

2013 ◽

Author(s):

S.K. Loh ◽

C.Q. Chen ◽

K.H. Yip ◽

A.C.T. Quah ◽

X. Tao ◽

...

Keyword(s):

Failure Analysis ◽

Static Analysis ◽

Electrical Behavior ◽

Functional Failure ◽

Bipolar Junction Transistor ◽

Root Cause ◽

Soft Failure ◽

Junction Transistor ◽

Special Challenge

Abstract It is difficult to simulate functional failures using static analysis tools, therefore, debugging and troubleshooting devices with functional failures present a special challenge for failure analysis (FA) work and often result in a root-cause success rate is quite low. In this paper, the application of advanced FIB circuit edit (CE) processes combined the static FA analysis yielded successful localization of a bipolar junction transistor (BJT) device soft failure. Additional FA techniques were incorporated within the FA flow, resulting in characterization of the electrical behavior of a suspected transistor and detection of an abnormal implant profile within the active area.

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Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 h

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l851 ◽

1999 ◽

Vol 38 (Part 2, No. 8A) ◽

pp. L851-L853 ◽

Cited By ~ 57

Author(s):

Seikoh Yoshida ◽

Joe Suzuki

Keyword(s):

Bipolar Junction Transistor ◽

Junction Transistor

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Unique dc characteristics of a new gated lateral pnp bipolar junction transistor (BJT) using 0.8 μm BiCMOS technology

Canadian Journal of Physics ◽

10.1139/p96-857 ◽

1996 ◽

Vol 74 (S1) ◽

pp. 189-194 ◽

Cited By ~ 2

Author(s):

M. J. Deen ◽

Z. X. Yan

Keyword(s):

Analog Circuit ◽

Current Gain ◽

Conversion Gain ◽

New Device ◽

Bipolar Junction Transistor ◽

Dc Characteristics ◽

Bicmos Technology ◽

Junction Transistor ◽

Rf Signal

In this paper, the detailed device dc performance of a gated lateral pnp (LPNP) device that has five terminals, collector C, base B, emitter E, gate G, and substrate S, and is fabricated in a 0.8 μm BiCMOS technology is described. Because this gated LPNP has two inputs and one output, it shows unique dc characteristics of variable current gain, βF, of 102 ~ 104 with VG variations of 0.4 to – 0.4 V; variable transconductance, gM, which increases 3 ~ 10 times as VE increases from 0.4 to 0.7 V. Based on these unique features, this new device is attractive for some analog circuit applications; for example, when used as a mixer, it has a conversion gain of 5–12 dB for an input RF signal up to 400 MHz.

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Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.1013 ◽

2014 ◽

Vol 778-780 ◽

pp. 1013-1016 ◽

Cited By ~ 1

Author(s):

Nuo Zhang ◽

Yi Rao ◽

Nuo Xu ◽

Ayden Maralani ◽

Albert P. Pisano

Keyword(s):

Silicon Carbide ◽

High Temperatures ◽

Elevated Temperatures ◽

Current Gain ◽

Voltage Gain ◽

Bipolar Junction Transistor ◽

Voltage Amplifier ◽

Junction Transistor ◽

Comprehensive Characterization

In this work, a 4H-Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) capable of operating at high temperatures up to 673 K is demonstrated. Comprehensive characterization including current gain, early voltage, and intrinsic voltage gain was performed. At elevated temperatures, although the current gain of the device is reduced, the intrinsic voltage gain increases to 5900 at 673 K, suggesting 4H-SiC BJT has the potential to be used as a voltage amplifier at extremely high temperatures.

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