Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures

2014 ◽  
Vol 778-780 ◽  
pp. 1013-1016 ◽  
Author(s):  
Nuo Zhang ◽  
Yi Rao ◽  
Nuo Xu ◽  
Ayden Maralani ◽  
Albert P. Pisano
Keyword(s):  
Silicon Carbide ◽  
High Temperatures ◽  
Elevated Temperatures ◽  
Current Gain ◽  
Voltage Gain ◽  
Bipolar Junction Transistor ◽  
Voltage Amplifier ◽  
Junction Transistor ◽  
Comprehensive Characterization

In this work, a 4H-Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) capable of operating at high temperatures up to 673 K is demonstrated. Comprehensive characterization including current gain, early voltage, and intrinsic voltage gain was performed. At elevated temperatures, although the current gain of the device is reduced, the intrinsic voltage gain increases to 5900 at 673 K, suggesting 4H-SiC BJT has the potential to be used as a voltage amplifier at extremely high temperatures.

Characterization of Boron Nitride Coated Silicon Carbide Fibers and Composites

1997 ◽  
Vol 3 (S2) ◽  
pp. 733-734
Author(s):  
Mani Gopal
Keyword(s):  
Silicon Carbide ◽  
Boron Nitride ◽  
High Temperatures ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Sic Fibers ◽  
Silicon Carbide Fibers ◽  
Pull Out ◽  
Sic Composites

Silicon carbide (SiC) composites are receiving much attention for structural use at high temperatures. One class of composites are those reinforced with SiC fibers. The SiC fibers are coated with boron nitride (BN) which is weakly bonded to the fiber. During fracture, the coating deflects cracks causing pull-out of the fibers (Fig. 1). This process of fiber pull-out consumes energy and increases the toughness of the composite. Although much work has been done on characterizing these materials by SEM, not much has been done using TEM due to difficulties in specimen preparation. The purpose of this study is to characterize these fibers and composites using conventional and analytical TEM.In this study, TEM specimens were prepared by dimpling and ion milling. Careful control of the preparation was needed to ensure the integrity of the SiC-BN interface. Figure 2a is a TEM image of the fiber showing delamination at the SiC-BN interface.

The characterization of the built-in bipolar junction transistor in H-gate PD-SOI NMOS

2020 ◽  
pp. 107919
Author(s):  
Huilong Zhu ◽  
Dawei Bi ◽  
Xin Xie ◽  
Zhiyuan Hu ◽  
Chunmei Liu ◽  
...  
Keyword(s):  
Bipolar Junction Transistor ◽  
Junction Transistor

scholarly journals High-Throughput Genotyping of Resilient Tomato Landraces to Detect Candidate Genes Involved in the Response to High Temperatures

Genes ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 626
Author(s):  
Fabrizio Olivieri ◽  
Roberta Calafiore ◽  
Silvana Francesca ◽  
Carlo Schettini ◽  
Pasquale Chiaiese ◽  
...  
Keyword(s):  
Candidate Genes ◽  
High Temperatures ◽  
Elevated Temperatures ◽  
Genotyping By Sequencing ◽  
High Impact ◽  
Yield Trait ◽  
Genetic Mechanisms ◽  
Stable Yield ◽  
Selection Of

The selection of tolerant varieties is a powerful strategy to ensure highly stable yield under elevated temperatures. In this paper, we report the phenotypic and genotypic characterization of 10 tomato landraces to identify the best performing under high temperatures. The phenotyping of five yield-related traits allowed us to select one genotype that exhibits highly stable yield performances in different environmental conditions. Moreover, a Genotyping-by-Sequencing approach allowed us to explore the genetic variability of the tested genotypes. The high and stable yielding landrace E42 was the most polymorphic one, with ~49% and ~47% private SNPs and InDels, respectively. The effect of 26,113 mutations on proteins’ structure was investigated and it was discovered that 37 had a high impact on the structure of 34 proteins of which some are putatively involved in responses to high temperatures. Additionally, 129 polymorphic sequences aligned against tomato wild species genomes revealed the presence in the genotype E42 of several introgressed regions deriving from S. pimpinellifolium. The position on the tomato map of genes affected by moderate and high impact mutations was also compared with that of known markers/QTLs (Quantitative Trait Loci) associated with reproductive and yield-related traits. The candidate genes/QTLs regulating heat tolerance in the selected landrace E42 could be further investigated to better understand the genetic mechanisms controlling traits for high and stable yield trait under high temperatures.

A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT

2009 ◽  
Vol 615-617 ◽  
pp. 821-824 ◽  
Author(s):  
Kenichi Nonaka ◽  
Akihiko Horiuchi ◽  
Yuki Negoro ◽  
Kensuke Iwanaga ◽  
Seiichi Yokoyama ◽  
...  
Keyword(s):  
Contact Region ◽  
Surface Recombination ◽  
Current Gain ◽  
Type Region ◽  
Bipolar Junction Transistor ◽  
Type Layer ◽  
Blocking Voltage ◽  
Junction Transistor ◽  
The Common ◽  
P Type

A new 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination structure: SSR-BJT has been proposed to improve the common emitter current gain which is one of the main issues for 4H-SiC BJTs. A Lightly Doped N-type layer (LDN-layer) between the emitter and base layers, and a High Resistive P-type region (HRP-region) formed between the emitter mesa edge and the base contact region were employed in the SSR-BJT. A fabricated SSR-BJT showed a maximum current gain of 134 at room temperature with a specific on-resistance of 3.2 mΩcm2 and a blocking voltage VCEO of 950 V. The SSR-BJT kept a current gain of 60 at 250°C with a specific on-resistance of 8 mΩcm2. To our knowledge, these current gains are the highest among 4H-SiC BJTs with a blocking voltage VCEO more than about 1000 V which have been ever reported.

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

2005 ◽  
Vol 483-485 ◽  
pp. 901-904 ◽  
Author(s):  
Sumi Krishnaswami ◽  
Anant K. Agarwal ◽  
Craig Capell ◽  
Jim Richmond ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Voltage Drop ◽  
Active Area ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Bipolar Junction Transistor ◽  
Forward Voltage Drop ◽  
Junction Transistor ◽  
A Current

1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm x 3.38 mm BJT devices with an active area of 3 mm x 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mW-cm2 was observed at room temperature. The onresistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm x 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.

Degradation of Current Gain for Ion Implanted 4H-SiC Bipolar Junction Transistor

2009 ◽  
Vol 1195 ◽  
Author(s):  
Yuki Watabe ◽  
Taku Tajima ◽  
Tohru Nakamura
Keyword(s):  
Current Gain ◽  
Bipolar Junction Transistor ◽  
Emitter Current ◽  
Bandgap Narrowing ◽  
Junction Transistor ◽  
The Common ◽  
Good Agreement ◽  
Ion Implanted

AbstractDegradation of current gain for ion implanted 4H-SiC bipolar junction transistor is described. The influence of bandgap-narrowing to the collector and base currents of the transistor was investigated using ISE-TCAD simulator. Simulated results show good agreement with the measured results, which show that the common emitter current gain of 3.9 is obtained at a maximum base concentration of 2×1017/cm3 and a maximum emitter concentration of 4×1019/cm3 for ion implanted 4H-SiC BJTs.

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