Transient and steady-state Monte-Carlo simulation of the effects of junction grading on carrier transport in InAlAs/InGaAs HBTs

2002 ◽  
Author(s):  
J. Hu ◽  
D. Pavlidis ◽  
K. Tomizawa
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Steady State ◽  
Carrier Transport ◽  
Transient And Steady State

Monte Carlo simulation of hot carrier transport in III-N LEDs

2015 ◽  
Vol 14 (2) ◽  
pp. 382-397 ◽  
Author(s):  
Pyry Kivisaari ◽  
Jani Oksanen ◽  
Jukka Tulkki ◽  
Toufik Sadi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Carrier Transport ◽  
Hot Carrier

Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometre silicon structures

1996 ◽  
Vol 11 (6) ◽  
pp. 865-872 ◽  
Author(s):  
E Starikov ◽  
P Shiktorov ◽  
V Gruzinskis ◽  
T González ◽  
M J Martín ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Steady State ◽  
Silicon Structures

Availability Analysis of Single-Component Systems with Various Failure and Repair Distributions

2003 ◽  
Vol 31 (3) ◽  
pp. 258-268 ◽  
Author(s):  
Singiresu S. Rao ◽  
David E. Foster
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Steady State ◽  
Exponential Distribution ◽  
Hazard Function ◽  
Probability Distributions ◽  
Single Component ◽  
Engineering Profession ◽  
Availability Analysis ◽  
Component Systems

Due to the demands on the engineering profession, all products and systems are expected to satisfy certain availability requirements. The availability is a measure of the readiness of a product or system for use at any specified time. In this work, the availability of single-component systems is addressed. Monte Carlo simulation is used to estimate the availability of the system, assuming that the failure and repair times follow exponential, normal (Gaussian), and uniform probability distributions. The results are compared. Although the availability functions look very different, the steady-state availability is the same for all. Also, the availability of a component whose hazard function follows the bathtub curve is estimated, and it is found that the exponential distribution is not a good approximation, especially at the earliest stages of operation.

Stability and Shrinkage by Diffusion in Hollow Nanotubes

2007 ◽  
Vol 266 ◽  
pp. 39-47 ◽  
Author(s):  
Alexander V. Evteev ◽  
Elena V. Levchenko ◽  
Irina V. Belova ◽  
Graeme E. Murch
Keyword(s):  
Monte Carlo Simulation ◽  
Exact Solution ◽  
Monte Carlo ◽  
Steady State ◽  
Kinetic Equation ◽  
Boundary Conditions ◽  
Linear Approximation ◽  
Kinetic Monte Carlo ◽  
Quasi Steady State ◽  
Vacancy Mechanism

The shrinkage via the vacancy mechanism of a mono–atomic nanotube is described. Using Gibbs–Thomson boundary conditions an exact solution is obtained of the kinetic equation in quasi steady–state at the linear approximation. A collapse time as a function of the size of a nanotube is determined. Kinetic Monte Carlo simulation is used to test the analytical analysis.

Monte Carlo Simulation of Boundary Scattering Effects for Power MOSFET Performance

2003 ◽  
Author(s):  
A. Marathe ◽  
D. G. Walker
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Carrier Transport ◽  
Hot Carriers ◽  
Power Mosfets ◽  
Hot Carrier ◽  
Microelectronic Devices ◽  
Interface Scattering ◽  
Scattering Effects ◽  
Hot Carrier Effects

Miniaturization of microelectronic devices has lead to many new issues not seen in larger structures, such as hot carrier effects and interfacial effects. In power MOSFETs, degradation of the transconductance can occur over the lifetime of a device. This decrease in performance is a result of hot carriers in the channel region scattering at a Si/SiO2 interface that has been passivated with hydrogen. Eventually hot carriers liberate the hydrogen, leaving silicon bonds with an entirely different scattering cross section. The current work presents a Monte Carlo simulation of carrier transport in silicon near an interface. Scattering parameters at the interface are parameterized and studied. It was found that electron mobility, which is proportional to transconductance, is a function of the energy loss rate and type of scattering at the interface. Results indicate that dangling bonds and H-Si bonds can be characterized by different scattering mechanisms.

MONTE CARLO SIMULATION OF STEADY-STATE TRANSPORT IN SUBMICROMETER InP AND GaAsn+–i(n)–n+ DIODE

2010 ◽  
Vol 24 (06) ◽  
pp. 549-560 ◽  
Author(s):  
H. ARABSHAHI ◽  
M. REZAEE ROKN-ABADI ◽  
F. BADIEIAN BAGHSIAHI ◽  
M. R. KHALVATI
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Anode Voltage ◽  
Electronic States ◽  
Electron Velocity ◽  
Back Scattering ◽  
Simulation Results ◽  
Average Electron

Monte Carlo simulation of electron transport in an InP diode of n+–i(n)–n+ structure is compared with GaAs diode. The anode voltage ranges from 0.5 to 1.5 V. The distributions of electron energies and electron velocities and the profiles of the electron density, electric field and potential and average electron velocity are computed. Based on these data, the near ballistic nature of the electron transport in the 0.2 μm-long diode and the importance of the back-scattering of electrons from the anode n+-layer are discussed. In addition, the effects of the lattice temperature and doping on the length of the active layer are discussed. Electronic states within the conduction band valleys at the Γ, L, and X are represented by non-parabolic ellipsoidal valleys centered on important symmetry points of the Brillouin zone. Our simulation results have also shown that the electron velocity characteristics in InP diode are more sensitive to temperature than in other III–V semiconductors such as GaAs .

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