Monte Carlo Simulation of Boundary Scattering Effects for Power MOSFET Performance

2003 ◽  
Author(s):  
A. Marathe ◽  
D. G. Walker
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Carrier Transport ◽  
Hot Carriers ◽  
Power Mosfets ◽  
Hot Carrier ◽  
Microelectronic Devices ◽  
Interface Scattering ◽  
Scattering Effects ◽  
Hot Carrier Effects

Miniaturization of microelectronic devices has lead to many new issues not seen in larger structures, such as hot carrier effects and interfacial effects. In power MOSFETs, degradation of the transconductance can occur over the lifetime of a device. This decrease in performance is a result of hot carriers in the channel region scattering at a Si/SiO2 interface that has been passivated with hydrogen. Eventually hot carriers liberate the hydrogen, leaving silicon bonds with an entirely different scattering cross section. The current work presents a Monte Carlo simulation of carrier transport in silicon near an interface. Scattering parameters at the interface are parameterized and studied. It was found that electron mobility, which is proportional to transconductance, is a function of the energy loss rate and type of scattering at the interface. Results indicate that dangling bonds and H-Si bonds can be characterized by different scattering mechanisms.

Monte Carlo simulation of hot carrier transport in III-N LEDs

2015 ◽  
Vol 14 (2) ◽  
pp. 382-397 ◽  
Author(s):  
Pyry Kivisaari ◽  
Jani Oksanen ◽  
Jukka Tulkki ◽  
Toufik Sadi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Carrier Transport ◽  
Hot Carrier

scholarly journals Quadrilateral Finite Element Monte Carlo Simulation of Complex Shape Compound FETs

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 127-130
Author(s):  
S. Babiker ◽  
A. Asenov ◽  
J. R. Barker ◽  
S. P. Beaumont
Keyword(s):  
Finite Element ◽  
Monte Carlo ◽  
Carrier Transport ◽  
Particle Simulation ◽  
Research Centre ◽  
Design Work ◽  
Hot Carrier ◽  
Multiple Data ◽  
Device Geometry ◽  
Quadrilateral Finite Element

The complex recess and gate shape of modem compound FETs greatly affect the device parasitics and therefore impose the need for proper description of the device geometry and surface conditions in any practical device simulations. In this paper we describe a new Monte Carlo (MC) module incorporated in our Heterojunction 2D Finite element FET simulator H2F [1]. The module combines realistic quadrilateral finite-element description of the device geometry with realistic particle simulation of the non-equilibrium hot carrier transport in short recess gate compound FETs. A Single Programme Multiple Data (SPMD) parallel approach makes it possible to use our MC simulator for practical design work, generating the necessary I-V characteristics in parallel. The capabilities of the finite element MC module are illustrated in example simulations of a 200nm pseudomorphic HEMT fabricated in the Nanoelectronics Research Centre of Glasgow University.

scholarly journals On the Monte Carlo Description of Hot Carrier Effects and Device Characteristics of III-N LEDs

2017 ◽  
Vol 3 (6) ◽  
pp. 1600494 ◽  
Author(s):  
Pyry Kivisaari ◽  
Toufik Sadi ◽  
Jingrui Li ◽  
Patrick Rinke ◽  
Jani Oksanen
Keyword(s):  
Monte Carlo ◽  
Hot Carrier ◽  
Hot Carrier Effects

scholarly journals Protecting hot carriers by tuning hybrid perovskite structures with alkali cations

2020 ◽  
Vol 6 (43) ◽  
pp. eabb1336 ◽  
Author(s):  
Ti Wang ◽  
Linrui Jin ◽  
Juanita Hidalgo ◽  
Weibin Chu ◽  
Jordan M. Snaider ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Successful Implementation ◽  
Hot Carriers ◽  
Alkali Cations ◽  
Hot Carrier ◽  
Hybrid Perovskite ◽  
Carrier Temperature ◽  
High Carrier ◽  
Halide Perovskites ◽  
Effective Carrier

Successful implementation of hot carrier solar cells requires preserving high carrier temperature as carriers migrate through the active layer. Here, we demonstrated that addition of alkali cations in hybrid organic-inorganic lead halide perovskites led to substantially elevated carrier temperature, reduced threshold for phonon bottleneck, and enhanced hot carrier transport. The synergetic effects from the Rb, Cs, and K cations result in ~900 K increase in the effective carrier temperature at a carrier density around 1018 cm−3 with an excitation 1.45 eV above the bandgap. In the doped thin films, the protected hot carriers migrate 100 s of nanometers longer than the undoped sample as imaged by ultrafast microscopy. We attributed these improvements to the relaxation of lattice strain and passivation of halide vacancies by alkali cations based on x-ray structural characterizations and first principles calculations.

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