High-performance microwave power AlInAs/GaInAs/InP double heterojunction bipolar transistors with compositionally graded base-collector junction

2002 ◽  
Author(s):  
M. Hafizi ◽  
T. Liu ◽  
P.A. MacDonald ◽  
M. Lui ◽  
P. Chu ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Microwave Power ◽  
High Performance ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Collector Junction

Microwave power InP/InGaAs/InP double-heterojunction bipolar transistors

1993 ◽  
Vol 29 (8) ◽  
pp. 724 ◽  
Author(s):  
J.-I. Song ◽  
W.-P. Hong ◽  
R. Bhat ◽  
K.B. Chough ◽  
J.R. Hayes ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Microwave Power ◽  
Bipolar Transistors ◽  
Double Heterojunction

1.5 V Low-Voltage Microwave Power Performance of InAlAs/InGaAs Double Heterojunction Bipolar Transistors

1997 ◽  
Vol 36 (Part 1, No. 2) ◽  
pp. 648-651 ◽  
Author(s):  
Taisuke Iwai ◽  
Hisao Shigematsu ◽  
Hiroshi Yamada ◽  
Takeshi Tomioka ◽  
Kazukiyo Joshin ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Microwave Power ◽  
Low Voltage ◽  
Bipolar Transistors ◽  
Power Performance ◽  
Double Heterojunction
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