Extraction of the gate oxide thickness of N- and P-Channel MOSFETs below 20 Å from the substrate current resulting from valence-band electron tunneling

2003 ◽  
Author(s):  
A. Shanware ◽  
J.P. Shiely ◽  
H.Z. Massoud ◽  
E. Vogel ◽  
K. Henson ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Band Electron ◽  
Substrate Current ◽  
Gate Oxide Thickness ◽  
Valence Band Electron

scholarly journals Excess Low-Frequency Noise in Ultrathin Oxide n-MOSFETs Arising From Valence-Band Electron Tunneling

2005 ◽  
Vol 52 (9) ◽  
pp. 2061-2066 ◽  
Author(s):  
J.-W. Wu ◽  
J.-W. You ◽  
H.-C. Ma ◽  
C.-C. Cheng ◽  
C.-F. Hsu ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Band Electron ◽  
Ultrathin Oxide ◽  
Valence Band Electron

A Compact Model for Valence-Band Electron Tunneling Current in Partially Depleted SOI MOSFETs

2007 ◽  
Vol 54 (2) ◽  
pp. 316-322 ◽  
Author(s):  
W. Wu ◽  
Xin Li ◽  
G. Gildenblat ◽  
G.O. Workman ◽  
S. Veeraraghavan ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Compact Model ◽  
Band Electron ◽  
Valence Band Electron

Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and dielectrics with oxide scaling

1999 ◽  
Vol 48 (1-4) ◽  
pp. 295-298 ◽  
Author(s):  
A. Shanware ◽  
H.Z. Massoud ◽  
E. Vogel ◽  
K. Henson ◽  
J.R. Hauser ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Band Electron ◽  
Valence Band Electron
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