valence band electron
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scholarly journals Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with Cd content up to 10 atomic percent

2020 ◽  
Vol 4 (4) ◽  
Author(s):  
M. Szot ◽  
P. Pfeffer ◽  
K. Dybko ◽  
A. Szczerbakow ◽  
L. Kowalczyk ◽  
...  
Keyword(s):  
Heat Transport ◽  
Valence Band ◽  
Solid Solutions ◽  
Atomic Percent ◽  
Band Electron ◽  
Valence Band Electron

scholarly journals Core-level and valence-band electron states in Zr-based bulk metallic glass

2009 ◽  
Vol 144 ◽  
pp. 012041 ◽  
Author(s):  
T Nasu ◽  
S Hosokawa ◽  
M Nakatake ◽  
H Sato ◽  
W Zhang ◽  
...  
Keyword(s):  
Metallic Glass ◽  
Bulk Metallic Glass ◽  
Valence Band ◽  
Core Level ◽  
Electron States ◽  
Band Electron ◽  
Valence Band Electron

Orbital Angular Momentum of Iron Valence Band Electron Deduced by Photoelectron Stereography

2008 ◽  
Vol 77 (10) ◽  
pp. 103301 ◽  
Author(s):  
Kentaro Goto ◽  
Fumihiko Matsui ◽  
Tomohiro Matsushita ◽  
Yukako Kato ◽  
Hiroshi Daimon
Keyword(s):  
Angular Momentum ◽  
Valence Band ◽  
Orbital Angular Momentum ◽  
Band Electron ◽  
Iron Valence ◽  
Valence Band Electron

A Compact Model for Valence-Band Electron Tunneling Current in Partially Depleted SOI MOSFETs

2007 ◽  
Vol 54 (2) ◽  
pp. 316-322 ◽  
Author(s):  
W. Wu ◽  
Xin Li ◽  
G. Gildenblat ◽  
G.O. Workman ◽  
S. Veeraraghavan ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Compact Model ◽  
Band Electron ◽  
Valence Band Electron

scholarly journals Excess Low-Frequency Noise in Ultrathin Oxide n-MOSFETs Arising From Valence-Band Electron Tunneling

2005 ◽  
Vol 52 (9) ◽  
pp. 2061-2066 ◽  
Author(s):  
J.-W. Wu ◽  
J.-W. You ◽  
H.-C. Ma ◽  
C.-C. Cheng ◽  
C.-F. Hsu ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Band Electron ◽  
Ultrathin Oxide ◽  
Valence Band Electron

Valence-band electron-tunneling measurement of the gate work function: Application to the high-κ/polycrystalline-silicon interface

2005 ◽  
Vol 98 (5) ◽  
pp. 053712 ◽  
Author(s):  
Luigi Pantisano ◽  
Valeri Afanas’ev ◽  
Geoffrey Pourtois ◽  
P. J. Chen
Keyword(s):  
Work Function ◽  
Valence Band ◽  
Polycrystalline Silicon ◽  
Electron Tunneling ◽  
Band Electron ◽  
Tunneling Measurement ◽  
Silicon Interface ◽  
Valence Band Electron ◽  
Gate Work Function
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