scholarly journals Excess Low-Frequency Noise in Ultrathin Oxide n-MOSFETs Arising From Valence-Band Electron Tunneling

2005 ◽  
Vol 52 (9) ◽  
pp. 2061-2066 ◽  
Author(s):  
J.-W. Wu ◽  
J.-W. You ◽  
H.-C. Ma ◽  
C.-C. Cheng ◽  
C.-F. Hsu ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Band Electron ◽  
Ultrathin Oxide ◽  
Valence Band Electron

Low frequency noise characterization and modelling in ultrathin oxide MOSFETs

2006 ◽  
Vol 50 (1) ◽  
pp. 63-68 ◽  
Author(s):  
T. Contaret ◽  
K. Romanjek ◽  
T. Boutchacha ◽  
G. Ghibaudo ◽  
F. Bœuf
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characterization ◽  
Ultrathin Oxide

A Compact Model for Valence-Band Electron Tunneling Current in Partially Depleted SOI MOSFETs

2007 ◽  
Vol 54 (2) ◽  
pp. 316-322 ◽  
Author(s):  
W. Wu ◽  
Xin Li ◽  
G. Gildenblat ◽  
G.O. Workman ◽  
S. Veeraraghavan ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Compact Model ◽  
Band Electron ◽  
Valence Band Electron

Slow oxide trap density profile extraction using gate current low-frequency noise in ultrathin oxide MOSFETs

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2382-2385 ◽  
Author(s):  
J. Armand ◽  
F. Martinez ◽  
M. Valenza ◽  
K. Rochereau ◽  
E. Vincent
Keyword(s):  
Density Profile ◽  
Low Frequency ◽  
Trap Density ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gate Current ◽  
Oxide Trap ◽  
Ultrathin Oxide

LOW FREQUENCY NOISE IN GALLIUM NITRIDE FIELD EFFECT TRANSISTORS

2002 ◽  
Vol 12 (02) ◽  
pp. 449-458 ◽  
Author(s):  
SERGEY L. RUMYANTSEV ◽  
MICHAEL S. SHUR ◽  
REMIS GASKA ◽  
MICHAEL. E. LEVINSHTEIN ◽  
M. ASIF KHAN ◽  
...  
Keyword(s):  
Field Effect ◽  
Electron Tunneling ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Drain Current ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

We report on experimental study of the low frequency noise in GaN-based Field Effect Transistors. In both GaN Metal Semiconductor Field Effect Transistors (MESFETs) and AlGaN/GaN Heterostructure Field Effect Transistors (HFETs), the main noise sources are located in the channel. Gate voltage dependence of noise in MESFETs complies with the Hooge formula and indicates the bulk origin of noise. The dependencies of the Hooge parameter, α, on sheet electron concentration ns in HFETs are extracted from measured drain current fluctuations taking into account the contact resistance, and the resistance of the ungated regions of the transistors. At low channel concentrations α is inversely proportional to ns (α ~ 1/ns). This dependence as well as the temperature dependence of noise might be explained by electron tunneling from the 2D gas into the traps in the bulk GaN or AlGaN.

Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and dielectrics with oxide scaling

1999 ◽  
Vol 48 (1-4) ◽  
pp. 295-298 ◽  
Author(s):  
A. Shanware ◽  
H.Z. Massoud ◽  
E. Vogel ◽  
K. Henson ◽  
J.R. Hauser ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Band Electron ◽  
Valence Band Electron
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