Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology
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2006 ◽
Vol 29
(3)
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pp. 172-178
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2004 ◽
Vol 272-276
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pp. 2307-2309
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2007 ◽
Vol 47
(1)
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pp. 27-35
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2011 ◽
Vol 51
(4)
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pp. 756-764
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