A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors

2012 International Electron Devices Meeting ◽

10.1109/iedm.2012.6478994 ◽

2012 ◽

Author(s):

Lining Zhang ◽

Jin He ◽

Mansun Chan

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Compact Model ◽

Double Gate ◽

Tunneling Field Effect Transistors ◽

Download Full-text

A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2012.2208933 ◽

2012 ◽

Vol 33 (10) ◽

pp. 1468-1470 ◽

Author(s):

Andrew Pan ◽

Chi On Chui

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Tunneling Field Effect Transistors ◽

Download Full-text

Drive Current Enhancement with Invasive Source in Double Gate Tunneling Field-Effect Transistors

10.7567/ssdm.2010.f-5-5 ◽

2010 ◽

Author(s):

Y. Yang ◽

P. F. Guo ◽

G. Q. Han ◽

C. L. Zhan ◽

L. Fan ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Drive Current ◽

Tunneling Field Effect Transistors ◽

Download Full-text

A gate leakage model for double gate tunneling field-effect transistors

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2014.7021522 ◽

2014 ◽

Author(s):

Ying Zhu ◽

Lining Zhang ◽

Aixi Zhang ◽

Mansun Chan

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Gate Leakage ◽

Leakage Model ◽

Tunneling Field Effect Transistors ◽

Download Full-text

Suppression of Ambipolar Current and Analysis of RF Performance in Double Gate Tunneling Field Effect Transistors for Low-Power Applications

International Journal of Nanoparticles and Nanotechnology ◽

10.35840/2631-5084/5533 ◽

2020 ◽

Vol 6 (1) ◽

Author(s):

Guenifi N ◽

Rahi SB ◽

Larbi M

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Tunneling Field Effect Transistors ◽

Ambipolar Current ◽

Gate Tunneling ◽

Download Full-text

Design optimization of vertical double-gate tunneling field-effect transistors

Journal of the Korean Physical Society ◽

10.3938/jkps.61.1679 ◽

2012 ◽

Vol 61 (10) ◽

pp. 1679-1682 ◽

Author(s):

Young Jun Yoon ◽

Sung Yun Woo ◽

Jae Hwa Seo ◽

Jae Sung Lee ◽

Yun Soo Park ◽

...

Keyword(s):

Design Optimization ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Tunneling Field Effect Transistors ◽

Download Full-text

RF modeling of p-n-p-n double-gate tunneling field-effect transistors

2014 Third Conference on Millimeter-Wave and Terahertz Technologies (MMWATT) ◽

10.1109/mmwatt.2014.7057188 ◽

2014 ◽

Author(s):

Saeid Marjani ◽

Seyed Ebrahim Hosseini

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Tunneling Field Effect Transistors ◽

Download Full-text

Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2017.08.014 ◽

2018 ◽

Vol 95 ◽

pp. 51-58 ◽

Author(s):

Xiangyu Liu ◽

Huiyong Hu ◽

Meng Wang ◽

Heming Zhang ◽

Shimin Cui ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Fully Depleted ◽

Tunneling Field Effect Transistors

Download Full-text

A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors

Microelectronic Engineering ◽

10.1016/j.mee.2019.111086 ◽

2019 ◽

Vol 216 ◽

pp. 111086

Author(s):

Fatimah Arofiati Noor ◽

Christoforus Bimo ◽

Ibnu Syuhada ◽

Toto Winata ◽

Khairurrijal Khairurrijal

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Compact Model ◽

Oxide Semiconductor ◽

Surrounding Gate ◽

Gate Tunneling ◽

Tunneling Currents

Download Full-text

Performances Improvement of Tunneling Field-Effect Transistors' with the Advanced Double-Gate PN Construction

2020 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan) ◽

10.1109/icce-taiwan49838.2020.9258240 ◽

2020 ◽

Author(s):

Yu-Jen Chen ◽

Jyi-Tsong Lin

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Tunneling Field Effect Transistors

Download Full-text

A compact model for compound semiconductor tunneling field-effect-transistors

IEEE SOUTHEASTCON 2014 ◽

10.1109/secon.2014.6950716 ◽

2014 ◽

Author(s):

J.U. Mehta ◽

W. A. Borders ◽

L. Lunardi ◽

H. Liu ◽

S. Datta

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Compound Semiconductor ◽

Compact Model ◽

Tunneling Field Effect Transistors

Download Full-text