MOS interface properties and mosfet performance on 4H-SiC{0001} and (11-20) processed by N/sub 2/O oxidation

Author(s):  
T. Kimoto ◽  
Y. Kanzaki ◽  
M. Noborio ◽  
H. Kawano ◽  
H. Matsunami
Keyword(s):  
1996 ◽  
Vol 54 (4) ◽  
pp. 2718-2722 ◽  
Author(s):  
L. Wang ◽  
S. Sivananthan ◽  
R. Sporken ◽  
R. Caudano

2007 ◽  
Vol 309 (2) ◽  
pp. 279-282 ◽  
Author(s):  
M.A. Alvarez ◽  
D. Seyler ◽  
S. Madrigal-Carballo ◽  
A.O. Vila ◽  
F. Molina

2007 ◽  
Vol 601 (18) ◽  
pp. 4484-4487 ◽  
Author(s):  
M. Nagel ◽  
I. Biswas ◽  
H. Peisert ◽  
T. Chassé

1990 ◽  
Vol 8 (4) ◽  
pp. 3251-3254 ◽  
Author(s):  
F. A. Abou‐Elfotouh ◽  
L. L. Kazmerski ◽  
R. J. Matson ◽  
D. J. Dunlavy ◽  
T. J. Coutts

2004 ◽  
Vol 235 (1-2) ◽  
pp. 73-79 ◽  
Author(s):  
S.D. Silaghi ◽  
G. Salvan ◽  
M. Friedrich ◽  
T.U. Kampen ◽  
R. Scholz ◽  
...  
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document