Studies of the electrical and interface properties of the metal contacts to CuInSe2 single crystals

AbstractGold and platinum metal contacts have been deposited on the cleaved and etched surfaces of ZnCdTe single crystals by “electroless” method from AuCl3, PtCl2 and PtCl4 aqueous solutions with different concentrations and deposition times. Atomic Force Microscopy (AFM) has been employed to reveal the surface morphology of metal contacts and it was found that for AuCl3 and PtCl2 solutions, the surface morphology and grain size are similar, and uniformly distributed. The surface morphology on contact made from PtCl4 shows a larger grain size, higher roughness and non-uniformity. The effect of different heat treatments to the surface morphology will be discussed.

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Investigation of Deep Level Defects in Mercuric Iodide by Thermally Stimulated Current Spectroscopy

MRS Proceedings ◽

10.1557/proc-209-541 ◽

1990 ◽

Vol 209 ◽

Author(s):

X.J. Bao ◽

T.E. Schlesinger ◽

R.B. James ◽

A.Y. Cheng ◽

C. Olrtale ◽

...

Keyword(s):

Single Crystals ◽

Deep Level ◽

Metal Contacts ◽

Mercuric Iodide ◽

Heating Rates ◽

Thermally Stimulated Current ◽

Depolarization Current ◽

Pyroelectric Effect ◽

Thermally Stimulated Current Spectroscopy ◽

Defect Levels

ABSTRACTMercuric iodide (HgI2) single crystals deposited with semitransparent Pd, Al and Ag contacts were studied by thermally stimulated current spectroscopy (TSC). Distinct differences were found among spectra obtained friom samples withdifferentmetal contacts, indicating that interactions between the metal contacts and mercuric iodide substrates have strong effects on the deep defect levels in mercuric iodide. The activation energies of some of these defect levels were estimated bytaking TSC spectra with different heating rates. In addition, a pyroelectric effect was observed in Ag-contactedsamplesbythermally stimulated depolarization current technique (TSDC). The implications of these results in device applicationsof mercuric iodide are discussed.

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The study of interfacial reactions of nickel thin films on GaAs

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074616 ◽

1983 ◽

Vol 41 ◽

pp. 156-157

Author(s):

L.J. Chen ◽

Y.F. Hsieh

Keyword(s):

Thin Films ◽

Integrated Circuits ◽

Interfacial Reactions ◽

Metal Contacts ◽

Nickel Thin Films ◽

Thin Foils ◽

The Status ◽

Si Doped ◽

Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

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The Microstructure of Shock-Synthesized Diamond

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010006163x ◽

1967 ◽

Vol 25 ◽

pp. 324-325

Author(s):

Lucien F. Trueb

Keyword(s):

Single Crystals ◽

Preferred Orientation ◽

High Magnification ◽

Texture Pattern ◽

Shock Process ◽

New Type ◽

Diffraction Diagram

A new type of synthetic industrial diamond formed by an explosive shock process has been recently developed by the Du Pont Company. This material consists of a mixture of two basically different forms, as shown in Figure 1: relatively flat and compact aggregates of acicular crystallites, and single crystals in the form of irregular polyhedra with straight edges.Figure 2 is a high magnification micrograph typical for the fibrous aggregates; it shows that they are composed of bundles of crystallites 0.05-0.3 μ long and 0.02 μ. wide. The selected area diffraction diagram (insert in Figure 2) consists of a weak polycrystalline ring pattern and a strong texture pattern with arc reflections. The latter results from crystals having preferred orientation, which shows that in a given particle most fibrils have a similar orientation.

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A New Defect in Polyethylene Single Crystals

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100070795 ◽

1973 ◽

Vol 31 ◽

pp. 70-71

Author(s):

E. L. Thomas ◽

S. L. Sass

Keyword(s):

Single Crystals ◽

Screw Dislocation ◽

Small Distance ◽

Dipole Model ◽

Dislocation Dipole ◽

Chain Folding ◽

Black And White ◽

Polymer Crystal ◽

Different Types

In polyethylene single crystals pairs of black and white lines spaced 700-3,000Å apart, parallel to the [100] and [010] directions, have been identified as microsector boundaries. A microsector is formed when the plane of chain folding changes over a small distance within a polymer crystal. In order for the different types of folds to accommodate at the boundary between the 2 fold domains, a staggering along the chain direction and a rotation of the chains in the plane of the boundary occurs. The black-white contrast from a microsector boundary can be explained in terms of these chain rotations. We demonstrate that microsectors can terminate within the crystal and interpret the observed terminal strain contrast in terms of a screw dislocation dipole model.

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Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100096813 ◽

1981 ◽

Vol 39 ◽

pp. 16-17

Author(s):

M.P. Thomas ◽

A.R. Waugh ◽

M.J. Southon ◽

Brian Ralph

Keyword(s):

Single Crystals ◽

Photoelectron Spectroscopy ◽

Surface Composition ◽

Depth Profiling ◽

Analytical Techniques ◽

Atom Probe ◽

Probe Field ◽

Preferential Sputtering ◽

Argon Ion Bombardment ◽

Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

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Dislocation structures around SiO2 Particles in aged Cu-Cr-SiO2

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100110118 ◽

1978 ◽

Vol 36 (1) ◽

pp. 594-595

Author(s):

N.J. Long ◽

M.H. Loretto ◽

C.H. Lloyd

Keyword(s):

Flow Stress ◽

Single Crystals ◽

Room Temperature ◽

Thin Foil ◽

Age Hardening ◽

Dispersion Strengthening ◽

Accurate Picture ◽

The Matrix ◽

Very High ◽

Good Agreement

IntroductionThere have been several t.e.m. studies (1,2,3,4) of the dislocation arrangements in the matrix and around the particles in dispersion strengthened single crystals deformed in single slip. Good agreement has been obtained in general between the observed structures and the various theories for the flow stress and work hardening of this class of alloy. There has been though some difficulty in obtaining an accurate picture of these arrangements in the case when the obstacles are large (of the order of several 1000's Å). This is due to both the physical loss of dislocations from the thin foil in its preparation and to rearrangement of the structure on unloading and standing at room temperature under the influence of the very high localised stresses in the vicinity of the particles (2,3).This contribution presents part of a study of the Cu-Cr-SiO2 system where age hardening from the Cu-Cr and dispersion strengthening from Cu-Sio2 is combined.

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Bright field and weak-beam images of dislocations gliding on (001) planes in F.C.C. metals

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100108908 ◽

1978 ◽

Vol 36 (1) ◽

pp. 352-353

Author(s):

H. P. Karnthaler ◽

A. Korner

Keyword(s):

Single Crystals ◽

Dislocation Structure ◽

Room Temperature ◽

Stage Ii ◽

Bright Field ◽

Weak Beam ◽

Standard Orientation

In f.c.c. metals slip is observed to occur generally on {111} planes. Glide dislocations on intersecting {111} planes can react with each other and form Lomer-Cottrell locks which lie along a <110> direction and are sessile since they are split on two {111} planes. Cottrell already pointed out that these dislocations could glide on {001} planes if they were not split. The first study of this phenomenon has been published recently. It is the purpose of this paper to report some interesting new details of the dislocations gliding on {001} planes in pure Ni, Cu, and Ag deformed at room temperature.Single crystals are grown with standard orientation and strained into stage II. The crystals are sliced parallel to the (001) planes. The dislocation structure is studied by TEM and the Burgers vectors ḇ and glide planes of the dislocations are determined unambiguously.In Fig.l primary P and secondary S dislocations react and form composite dislocations K.

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Precipitation of NiHfsi phase in NiAl single crystals containing Hf

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100139032 ◽

1995 ◽

Vol 53 ◽

pp. 532-533

Author(s):

A. Garg ◽

R. D. Noebe ◽

R. Darolia

Keyword(s):

High Temperature ◽

Single Crystals ◽

High Temperature Strength ◽

Bridgman Technique ◽

Shell Mold ◽

Third Phase ◽

Unknown Phase ◽

Transmission Electron ◽

Two Phases ◽

Nial Matrix

Small additions of Hf to NiAl produce a significant increase in the high-temperature strength of single crystals. Hf has a very limited solubility in NiAl and in the presence of Si, results in a high density of G-phase (Ni16Hf6Si7) cuboidal precipitates and some G-platelets in a NiAl matrix. These precipitates have a F.C.C structure and nucleate on {100}NiAl planes with almost perfect coherency and a cube-on-cube orientation-relationship (O.R.). However, G-phase is metastable and after prolonged aging at high temperature dissolves at the expense of a more stable Heusler (β'-Ni2AlHf) phase. In addition to these two phases, a third phase was shown to be present in a NiAl-0.3at. % Hf alloy, but was not previously identified (Fig. 4 of ref. 2 ). In this work, we report the morphology, crystal-structure, O.R., and stability of this unknown phase, which were determined using conventional and analytical transmission electron microscopy (TEM).Single crystals of NiAl containing 0.5at. % Hf were grown by a Bridgman technique. Chemical analysis indicated that these crystals also contained Si, which was not an intentional alloying addition but was picked up from the shell mold during directional solidification.

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Zone-axis ALCHEMI for the rapid assessment of site occupancies in garnets

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144905 ◽

1986 ◽

Vol 44 ◽

pp. 706-707

Author(s):

M.T. Otten ◽

P.R. Buseck

Keyword(s):

Single Crystals ◽

Rapid Assessment ◽

Site Occupancy ◽

Zone Axis ◽

Synthetic Compounds ◽

X Ray ◽

Large Group ◽

Crystallographic Planes

ALCHEMI (Atom Location by CHannelling-Enhanced Microanalysis) is a TEM technique for determining site occupancies in single crystals. The method uses the channelling of incident electrons along specific crystallographic planes. This channelling results in enhanced x-ray emission from the atoms on those planes, thereby providing the required site-occupancy information. ALCHEMI has been applied with success to spinel, olivine and feldspar. For the garnets, which form a large group of important minerals and synthetic compounds, the channelling effect is weaker, and significant results are more difficult to obtain. It was found, however, that the channelling effect is pronounced for low-index zone-axis orientations, yielding a method for assessing site occupancies that is rapid and easy to perform.

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