International Meeting for Future of Electron Devices, 2004.
Latest Publications

TOTAL DOCUMENTS

69

(FIVE YEARS 0)

H-INDEX

2

(FIVE YEARS 0)

Published By IEEE

0780384237

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

High-power and low-noise blue-violet laser diodes on a GaN substrate

International Meeting for Future of Electron Devices, 2004. ◽

10.1109/imfedk.2004.1566403 ◽

2006 ◽

Author(s):

T. Kano ◽

Y. Bessho ◽

H. Ohbo ◽

H. Izu ◽

M. Hata ◽

...

Keyword(s):

Laser Diodes ◽

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Physics-based analytical model of quantum-mechanical electron wave function penetration into thin dielectric films for capacitance evaluation

International Meeting for Future of Electron Devices, 2004. ◽

10.1109/imfedk.2004.1566431 ◽

2006 ◽

Author(s):

Y. Nakmori ◽

K. Moriguchi ◽

K. Komiya ◽

Y. Omura

Keyword(s):

Wave Function ◽

Analytical Model ◽

Dielectric Films ◽

Quantum Mechanical ◽

Electron Wave Function ◽

Electron Wave ◽

Thin Dielectric Films

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Novel ultra tough organic low-k dielectrics

International Meeting for Future of Electron Devices, 2004. ◽

10.1109/imfedk.2004.1566438 ◽

2006 ◽

Author(s):

N. Aoi ◽

T. Fukuda ◽

H. Yanazawa

Keyword(s):

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Asuka project -- mission and status--

International Meeting for Future of Electron Devices, 2004. ◽

10.1109/imfedk.2004.1566437 ◽

2006 ◽

Author(s):

Nobuhiro Endo

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Influence of dry etching on nitride semiconductor Schottky characteristics

International Meeting for Future of Electron Devices, 2004. ◽

10.1109/imfedk.2004.1566413 ◽

2006 ◽

Author(s):

A. Hinoki ◽

K. Hataya ◽

H. Miyamoto ◽

T. Nakayama ◽

Y. Ando ◽

...

Keyword(s):

Dry Etching ◽

Nitride Semiconductor

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MOS interface properties and mosfet performance on 4H-SiC{0001} and (11-20) processed by N/sub 2/O oxidation

International Meeting for Future of Electron Devices, 2004. ◽

10.1109/imfedk.2004.1566404 ◽

2006 ◽

Author(s):

T. Kimoto ◽

Y. Kanzaki ◽

M. Noborio ◽

H. Kawano ◽

H. Matsunami

Keyword(s):

Interface Properties

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HF vapor cleaning/etching of Si surfaces

International Meeting for Future of Electron Devices, 2004. ◽

10.1109/imfedk.2004.1566427 ◽

2006 ◽

Author(s):

M. Ishikawa ◽

S. Fujiwara ◽

Y. Yuba ◽

Y. Akasaka

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Improvement in readout reliability of a nondestructive readout feram by asymmetrical programming

International Meeting for Future of Electron Devices, 2004. ◽

10.1109/imfedk.2004.1566440 ◽

2006 ◽

Author(s):

S. Kovama ◽

Y. Kato ◽

T. Yamada ◽

Y. Shimada

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Laser terahertz emission microscope for inspecting electrical failures in integrated circuits

International Meeting for Future of Electron Devices, 2004. ◽

10.1109/imfedk.2004.1566392 ◽

2006 ◽

Author(s):

M. Yamashita ◽

T. Kiwa ◽

M. Tonouchi ◽

K. Nikawa ◽

C. Otani ◽

...

Keyword(s):

Integrated Circuits ◽

Terahertz Emission

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Device performance at elevated temperatures up to 2000C in AlGaN/GaN insulated gate heterostructure field effect transistors with ultra-thin aAl/sub 2/O/sub 3//Si/sub 3/N/sub 4/ bilayer

International Meeting for Future of Electron Devices, 2004. ◽

10.1109/imfedk.2004.1566400 ◽

2006 ◽

Author(s):

Chengxin Wang ◽

N. Maeda ◽

M. Hiroki ◽

T. Kobayashi ◽

T. Enoki

Keyword(s):

Field Effect ◽

Elevated Temperatures ◽

Field Effect Transistors ◽

Device Performance ◽

Heterostructure Field Effect Transistors

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