Characterization and failure analysis of Sub-10 nm diameter, gate-all-around nanowire field-effect transistors subject to electrostatic discharge (ESD)
Failure Analysis of Si Nanowire Field-Effect Transistors Subject to Electrostatic Discharge Stresses
2010 ◽
Vol 31
(9)
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pp. 915-917
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Keyword(s):
Keyword(s):
Keyword(s):
2010 ◽
Vol 9
(3)
◽
pp. 352-354
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2009 ◽
Vol 30
(9)
◽
pp. 969-971
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