scholarly journals Characteristics of Tunnel Field-effect Transistors under Power-on Electrostatic Discharge and Electrical Overstress Conditions

2020 ◽  
Vol 32 (5) ◽  
pp. 1889
Author(s):  
Zhaonian Yang ◽  
Pan Mao ◽  
Yue Zhang ◽  
Ningmei Yu ◽  
Juin J. Liou
Keyword(s):  
Field Effect ◽  
Electrostatic Discharge ◽  
Field Effect Transistors ◽  
Electrical Overstress

scholarly journals Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 454
Author(s):  
You Wang ◽  
Yu Mao ◽  
Qizheng Ji ◽  
Ming Yang ◽  
Zhaonian Yang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Computer Aided Design ◽  
Field Effect ◽  
Electrostatic Discharge ◽  
Field Effect Transistors ◽  
Test Method ◽  
Current Path ◽  
Simulation Results ◽  
Current Characteristics ◽  
Aided Design

Gate-grounded tunnel field effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. ESD test method of transmission line pulse is used to deeply analyze the current characteristics and working mechanism of Conventional TFET ESD impact. On this basis, a SiGe Source/Drain PNN (P+N+N+) tunnel field effect transistors (TFET) was proposed, which was simulated by Sentaurus technology computer aided design (TCAD) software. Simulation results showed that the trigger voltage of SiGe PNN TFET was 46.3% lower, and the failure current was 13.3% higher than Conventional TFET. After analyzing the simulation results, the parameters of the SiGe PNN TFET were optimized. The single current path of the SiGe PNN TFET was analyzed and explained in the case of gate grounding.

scholarly journals Research on electrostatic discharge characteristics of tunnel field effect transistors

2014 ◽  
Vol 63 (17) ◽  
pp. 178501
Author(s):  
Wang Yuan ◽  
Zhang Li-Zhong ◽  
Cao Jian ◽  
Lu Guang-Yi ◽  
Jia Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Electrostatic Discharge ◽  
Field Effect Transistors ◽  
Discharge Characteristics

Thermoreflectance microscopy applied to the study of electrostatic discharge degradation in metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (10) ◽  
pp. 104510 ◽  
Author(s):  
L. R. de Freitas ◽  
E. C. da Silva ◽  
A. M. Mansanares ◽  
M. B. C. Pimentel ◽  
S. Eleutério Filho ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Electrostatic Discharge ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Thermoreflectance Microscopy

Study of graphene field‐effect transistors under electrostatic discharge stresses

2013 ◽  
Vol 49 (17) ◽  
pp. 1086-1087
Author(s):  
Shurong Dong ◽  
Lei Zhong ◽  
Jie Zeng ◽  
Wei Guo ◽  
Hongwei Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Electrostatic Discharge ◽  
Field Effect Transistors

Electrostatic Discharge Robustness of Si Nanowire Field-Effect Transistors

2009 ◽  
Vol 30 (9) ◽  
pp. 969-971 ◽  
Author(s):  
Wen Liu ◽  
J.J. Liou ◽  
A. Chung ◽  
Yoon-Ha Jeong ◽  
Wei-Chen Chen ◽  
...  
Keyword(s):  
Field Effect ◽  
Electrostatic Discharge ◽  
Field Effect Transistors ◽  
Si Nanowire

Electrostatic Discharge (ESD) Protection Challenges of Gate-All-Around Nanowire Field-Effect Transistors

2019 ◽  
Vol 34 (1) ◽  
pp. 55-60
Author(s):  
Wen Liu ◽  
Juin J. Liou ◽  
N. Singh ◽  
G. Q. Lo ◽  
J. Chung ◽  
...  
Keyword(s):  
Field Effect ◽  
Electrostatic Discharge ◽  
Field Effect Transistors ◽  
Esd Protection

Failure Analysis of Si Nanowire Field-Effect Transistors Subject to Electrostatic Discharge Stresses

2010 ◽  
Vol 31 (9) ◽  
pp. 915-917 ◽  
Author(s):  
Wen Liu ◽  
Juin J. Liou ◽  
Y. Jiang ◽  
Navab Singh ◽  
G. Q. Lo ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Field Effect ◽  
Electrostatic Discharge ◽  
Field Effect Transistors ◽  
Si Nanowire
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