Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

Backside Failure Analysis by Electroluminescence on Microwave Devices

2008 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
P. Delaqueze ◽  
J.C. Clement ◽  
N. Malbert ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Heterojunction Bipolar Transistor ◽  
High Electron ◽  
Chemical Sensitivity ◽  
High Chemical ◽  
High Electron Mobility ◽  
Failure Localization

Abstract III-V HBT (Heterojunction Bipolar Transistor) and HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. Active area thickness is only few nanometers, backside failure localization is mandatory because of thermal drain or metal bridge covering the front side, materials involved might be of ultimate hardness and/or high chemical sensitivity while failure mechanisms strongly differ from Si technology ones. To face these challenges, we have developed a complete approach, without degrading the component, based on backside failure analysis by electroluminescence. Its efficiency and completeness have been demonstrated through case studies.

UV Emission Microscopy Development for High Band Gap Components

2009 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Light Emission ◽  
Uv Light ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Hot Electron ◽  
Microscopy Technique ◽  
Uv Emission ◽  
High Band

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. As well as the improvement of the MMIC performances, the localization of the defects linked with hot electron and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by UV electroluminescence or UV light emission. Its feasibility and efficiency have been demonstrated through two case studies. So, a specific UV microscopy technique has been developed and is presented in this paper.

Investigation of Dielectric Resonator Oscillator Using High-Electron Mobility Transistor at 26GHz for Space Applications

2021 ◽  
pp. 2250046
Author(s):  
Pinku Ranjan ◽  
Swati Khandare
Keyword(s):  
Phase Noise ◽  
Electron Mobility ◽  
Dielectric Resonator ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Design System ◽  
High Electron ◽  
Space Applications ◽  
High Electron Mobility ◽  
High Frequencies

An oscillator is a vital component as the energy source in microwave telecommunication system. Microwave oscillators designed using Gunn diode have poor DC to RF efficiency. IMPact Ionization Avalanche Transit-Time diode (IMPATT) oscillators have the drawback of poor noise performance. The transistorized oscillators have a limitation to the maximum oscillation frequency which means that they cannot be used for oscillators designed for high frequencies. To design negative series feedback Dielectric Resonator Oscillator (DRO), the resonant unit uses a dielectric resonator (DR) since it is small in size, light in weight, has high-Quality ([Formula: see text]) factor, better stability and also it is inexpensive. It has the benefits of low-phase noise, low cost, miniaturization, high stability, applicable for devices designed at high frequencies and had already been widely applied, so the research on microwave dielectric oscillator has also been one of the focus of today’s microwave integrated circuits. DRO is widely used in electronic warfare, missile, radar and communication systems. The DRO incorporates High-Electron Mobility Transistor (HEMT) as an active device since it offers higher power-added efficiency combined with excellent low-noise figures and performance. The entire circuit of DRO using HEMT at 26[Formula: see text]GHz is designed using Agilent Advanced Design System (ADS) software. In this, DRO different measurements of parameters are done such as output power which is typically [Formula: see text][Formula: see text]dBm for 26[Formula: see text]GHz DRO, phase noise at 10[Formula: see text]kHz offset for 26[Formula: see text]GHz DRO it is 80[Formula: see text]dBc/Hz. The frequency pushing and frequency pulling for 26[Formula: see text]GHz DRO its typical values are 30[Formula: see text]kHz/V and 1[Formula: see text]MHz, respectively.

scholarly journals Compact Cryogenic Receivers for the 1.3 to 43 GHz Range

1988 ◽  
Vol 129 ◽  
pp. 499-500
Author(s):  
S. Weinreb ◽  
R. Norrod ◽  
M. W. Pospieszalski
Keyword(s):  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Current Status ◽  
High Electron ◽  
Light Weight ◽  
Closed Cycle ◽  
High Electron Mobility ◽  
Dual Channel ◽  
Long Baseline ◽  
Very Long Baseline Array

A series of front-ends utilizing small closed-cycle refrigerators and very low-noise, high-electron-mobility transistor (HEMT) amplifiers have been developed for use in the Very Long Baseline Array (VLBA). The frequency bands, amplifier noise temperatures, expected system temperatures, and current status are shown in Table I. The receivers are designed to be light weight (∼ 55 pounds except for 105 pounds at 1.5 GHz) for ease of installation and maintenance, are easily remotely controlled and monitored, and provide dual-channel circular polarization capability. Detailed descriptions of some of the front-ends are given in VLBA technical reports.

A 60-GHz three-stage low noise amplifier using 0.15-μm gallium-arsenic pseudomorphic high-electron mobility transistor technology

2011 ◽  
Vol 54 (2) ◽  
pp. 329-332 ◽  
Author(s):  
Chih-Min Hu ◽  
Chung-Yu Hung ◽  
Chun-Hsueh Chu ◽  
Da-Chiang Chang ◽  
Ying-Zong Juang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
High Electron ◽  
60 Ghz ◽  
High Electron Mobility ◽  
Noise Amplifier

scholarly journals A wideband cryogenic microwave low-noise amplifier

2020 ◽  
Vol 11 ◽  
pp. 1484-1491
Author(s):  
Boris I Ivanov ◽  
Dmitri I Volkhin ◽  
Ilya L Novikov ◽  
Dmitri K Pitsun ◽  
Dmitri O Moskalev ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Coplanar Waveguide ◽  
Noise Temperature ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Frequency Range ◽  
Noise Amplifier ◽  
On Chip

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

scholarly journals Millimeter-wave GaN-based HEMT development at ETH-Zürich

2010 ◽  
Vol 2 (1) ◽  
pp. 33-38 ◽  
Author(s):  
Haifeng Sun ◽  
Diego Marti ◽  
Stefano Tirelli ◽  
Andreas R. Alt ◽  
Hansruedi Benedickter ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Speed ◽  
Low Cost ◽  
High Electron Mobility Transistor ◽  
High Resistivity ◽  
High Electron ◽  
Cutoff Frequencies ◽  
Gan Hemts ◽  
The Difference ◽  
Gan On Si

We review the AlGaN/GaN high electron mobility transistor (HEMT) activities in the Millimeter-Wave Electronics Group at ETH-Zürich. Our group's main thrust in the AlGaN/GaN arena is the extension of device bandwidth to higher frequency bands. We demonstrated surprising performances for AlGaN/GaN HEMTs grown on high-resistivity (HR) silicon (111) substrates, and extended cutoff frequencies of 100 nm gate devices well into the millimeter (mm)-wave domain. Our results narrow the performance gap between GaN-on-SiC (or sapphire) and GaN-on-silicon and establish GaN-on-Si as a viable technology for low-cost mm-wave electronics. We here contrast the difference in behaviors observed in our laboratory between nominally identical devices built on high-resistivity silicon (HR-Si) and on sapphire substrates; we show high-speed devices with high-cutoff frequencies and breakdown voltages which combine fT,MAX × BV products as high as 5–10 THz V, and show AlGaN/GaN HEMTs with fT values exceeding 100 GHz on HR-Si. Although the bulk of our activities have so far focused on AlGaN/GaN HEMTs on HR-Si, our process produces excellent device performances when applied to GaN HEMTs on SiC as well: 100 nm gate transistors with fT > 125 GHz have been realized at ETH-Zürich.

Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer

2007 ◽  
Vol 17 (01) ◽  
pp. 85-89 ◽  
Author(s):  
Yunju Sun ◽  
Lester F. Eastman
Keyword(s):  
Contact Resistance ◽  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistor ◽  
Metal Contact ◽  
High Electron ◽  
Transfer Resistance ◽  
High Electron Mobility ◽  
Hemt Structure ◽  
Gan Hemts

A significant improvement of contact transfer resistance on undoped GaN/AlGaN/AlN (10 Å)/ GaN high electron mobility transistor (HEMT) structure was demonstrated using a Ta/Ti/Al/Mo/Au metallization scheme compared to a Ti/Al/Mo/Au metallization scheme. A contact resistance as low as 0.16 ± 0.03 ohm - mm was achieved by rapid thermal annealing of evaporated Ta (125 Å)/ Ti (150 Å)/ Al (900 Å)/ Mo (400 Å)/ Au (500 Å) metal contact at 700 °C for 1 min followed by 800 °C for 30 sec in a N 2 ambient. An excellent edge acuity was also demonstrated for the annealed Ta/Ti/Al/Mo/Au ohmic contacts.

scholarly journals GaN low-noise X-band MMIC amplifier.

2021 ◽  
Vol 2021 (2) ◽  
Author(s):  
E. Kudabay ◽  
◽  
A. Salikh ◽  
V.A. Moseichuk ◽  
A. Krivtsun ◽  
...  
Keyword(s):  
Output Power ◽  
Integrated Circuit ◽  
Noise Figure ◽  
Supply Voltage ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Common Source ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
X Band

The purpose of this paper is to design a microwave monolithic integrated circuit (MMIC) for low noise amplifier (LNA) X-band (7-12 GHz) based on technology of gallium nitride (GaN) high electron mobility transistor (HEMT) with a T-gate, which has 100 nm width, on a silicon (Si) semi-insulating substrate of the OMMIC company. The amplifier is based on common-source transistors with series feedback, which was formed by high-impedance transmission line, and with parallel feedback to match noise figure and power gain. The key characteristics of an LNA are noise figure and gain. However, in this paper, it was decided to design the LNA, which should have a good margin in terms of input and output power. As a result, GaN technology was chosen, which has a higher noise figure compared to other technologies, but eliminates the need for an input power limiter, which in turn significantly increases the overall noise figure. As a result LNA MMIC was developed with the following characteristics: noise figure less than 1.6 dB, small-signal gain more than 20 dB, return loss better than -13 dB and output power more than 19 dBm with 1 dB compression in the range from 7 to 12 GHz in dimensions 2x1.5 mm², which has a supply voltage of 8 V and a current consumption of less than 70 mA. However, it should be said that LNA was only modeled in the AWR DE.

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