Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Silicon ◽  
2020 ◽  
Author(s):  
Khushwant Sehra ◽  
Vandana Kumari ◽  
Mridula Gupta ◽  
Meena Mishra ◽  
D. S. Rawal ◽  
...  
Keyword(s):  
High Gain ◽  
Low Noise ◽  
Gan Hemts

A Low-Noise, High-Gain Quasi-Millimeter-Wave Receiver MMIC with a Very High Degree of Integration Using 3D-MMIC Technology

2011 ◽  
Vol E94-C (10) ◽  
pp. 1548-1556 ◽  
Author(s):  
Takana KAHO ◽  
Yo YAMAGUCHI ◽  
Kazuhiro UEHARA ◽  
Kiyomichi ARAKI
Keyword(s):  
Millimeter Wave ◽  
High Gain ◽  
Low Noise ◽  
High Degree ◽  
Very High ◽  
Millimeter Wave Receiver

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

Low-Noise Microwave Performance of 0.1 $\mu$m Gate AlInN/GaN HEMTs on SiC

2010 ◽  
Vol 20 (8) ◽  
pp. 453-455 ◽  
Author(s):  
Haifeng Sun ◽  
Andreas R. Alt ◽  
Hansruedi Benedickter ◽  
Eric Feltin ◽  
Jean-Francois Carlin ◽  
...  
Keyword(s):  
Low Noise ◽  
Gan Hemts

scholarly journals A 5.7GHz low noise figure ultra high gain CMOS LNA with inter stage technique

2010 ◽  
Vol 7 (23) ◽  
pp. 1686-1693 ◽  
Author(s):  
Ehsan Kargaran ◽  
Hojat Khosrowjerdi ◽  
Karim Ghaffarzadegan ◽  
Hooman Nabovati
Keyword(s):  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Cmos Lna

scholarly journals A 60 GHz fully differential LNA in 90 nm CMOS technology

2013 ◽  
Vol 6 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Andrea Malignaggi ◽  
Amin Hamidian ◽  
Georg Boeck
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Transmission Lines ◽  
Noise Figure ◽  
Design Procedure ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
60 Ghz ◽  
Fully Differential

The present paper presents a fully differential 60 GHz four stages low-noise amplifier for wireless applications. The amplifier has been optimized for low-noise, high-gain, and low-power consumption, and implemented in a 90 nm low-power CMOS technology. Matching and common-mode rejection networks have been realized using shielded coplanar transmission lines. The amplifier achieves a peak small-signal gain of 21.3 dB and an average noise figure of 5.4 dB along with power consumption of 30 mW and occupying only 0.38 mm2pads included. The detailed design procedure and the achieved measurement results are presented in this work.

A 0.1-10GHz Ultra-Wideband High-Gain Low-Noise Amplifier for UWB receiver

2021 ◽  
Author(s):  
Zerun Jin ◽  
Zhi-Jian Chen ◽  
Riyan Wang ◽  
Bin Li ◽  
Xiao-Ling Lin
Keyword(s):  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Noise Amplifier ◽  
Uwb Receiver
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