scholarly journals Giant Magnetoresistance and Remanence in Granular CoCu Co-Deposited Films

2005 ◽  
Author(s):  
A.D.C. Viegas ◽  
J. Geshev ◽  
E.F. Ferrari ◽  
J.E. Schmidt
Keyword(s):  
Giant Magnetoresistance ◽  
Deposited Films

GMR, Structural, and Magnetic Studies in NiFeCo/Ag Multilayer thin Films

1994 ◽  
Vol 343 ◽  
Author(s):  
J.D. Jarratt ◽  
J.A. Barnard
Keyword(s):  
Giant Magnetoresistance ◽  
Uniaxial Anisotropy ◽  
Hysteresis Loops ◽  
Film Plane ◽  
Film Structure ◽  
X Ray Diffraction ◽  
Magnetic Studies ◽  
Lower Temperature ◽  
Deposited Films

ABSTRACTGiant Magnetoresistance (GMR), crystal structure, and magnetic properties have been investigated in a series of sputtered Ni66Fe16Co18/Ag multilayer films with induced uniaxial anisotropy. The film thickness ranges studied were 20 and 25 Å for NiFeCo, and 25 to 50 Å for Ag. GMR was only evident in the films after post-deposition annealing. This onset of GMR is thought to be due to the breaking up of the NiFeCo layers into ferromagnetic platelets or islands by the immiscible Ag diffusing perpendicular to the film plane along the grain boundaries. The magnitude and field sensitivity of the GMR was dependent on the annealing time and temperature. High angle x-ray diffraction (HXRD) was used to reveal the overall film structure and growth texture and low angle XRD (LXRD) was used to investigate the quality of the multilayer structures. M-H hysteresis loops revealed in-plane uniaxial anisotropy in as-deposited films which is eventually eliminated with annealing. The easy axis squareness experiences a pronounced decrease with lower temperature annealing, but then increases slightly with annealing temperature.

The Microstructure and Giant Magnetoresistance of NiFeAg Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
Michael A. Parker ◽  
K. R. Coffey ◽  
T. L. Hylton ◽  
J. K. Howard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Growth ◽  
Giant Magnetoresistance ◽  
Microstructural Characterization ◽  
Structure Property ◽  
Structure Property Relationships ◽  
Deposited Films

ABSTRACTAlthough Much has been published on giant Magnetoresistance (GMR) in co-deposited thin films [1–4], only little [5] has been published on the structure-property relationships limiting the effect. Here, we report the results of microstructural characterization of NiFeAg thin films that exhibit a GMR effect. The as-deposited films show a sizeable GMR effect. The Maximum GMR effect observed was 6.4% with -4k0e FWHM of the 6P/P peak. Upon annealing these films, the GMR at first increases, and then decreases. We present microstructural evidence from TEM and XRD, amongst other techniques, which shows that this is a consequence of the initial NiFeAg thin film agglomerating into NiFe grains in a predominantly Ag segregant Matrix. Upon extended annealing, excessive grain growth leads to a decrease in the GMR as predicted by the model of Berkowitz, et al. [1].

Precipitation in Al + 4% Cu Epitaxial Films

1968 ◽  
Vol 26 ◽  
pp. 384-385
Author(s):  
S. Herd ◽  
S. M. Mader
Keyword(s):  
Solid Solution ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Detectable Change ◽  
Cu Films ◽  
Solution Treated ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Deposited Films

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.

Modulated structures in (Bi,Pb)-Sr-Ca-Cu-O films

1990 ◽  
Vol 48 (4) ◽  
pp. 62-63
Author(s):  
Shozo Ikeda ◽  
Hirotoshi Hayakawa ◽  
Daniel R. Dietderich
Keyword(s):  
Rf Magnetron Sputtering ◽  
Potential Method ◽  
High Tc ◽  
Bscco System ◽  
Heat Treated ◽  
Modulated Structures ◽  
High Tc Phase ◽  
Deposited Films ◽  
Sputtering System

Pb addition makes easier to form the high Tc phase in the BSCCO system. However, Pb easily vaporized at high temperature. A controlled Pb potential method has been applied to grow the high Tc phase in films. Initially, films are deposited on cleaved MgO substrates using an rf magnetron sputtering system. These amorphous as-deposited films are heat treated in a sealed gold capsule along with a large pellet of Pb-added BSCCO. Details of the process and characterization of the films have been reported elsewhere (1). Films trated for 0.5h at 850° C contain mainly the low Tc phase with a small amount of the high Tc phase. Hawever, films treated for 3h at 850°C consist mainly of the high Tc phase. This film is superconductive with a Tc(zero) of 106K. The Pb/Bi ratio of the films, analysed by SEM- EDS, are 0.12 and 0.18 for heat tratment times of 0.5 and 3h, respectively. The present study investigates the modulated structures of these films using HREM.

Giant Magnetoresistance Properties in CoFe/Cu Multilayers

1998 ◽  
Vol 22 (4_2) ◽  
pp. 537-540 ◽  
Author(s):  
Y. Seyama ◽  
M. Iijima ◽  
A. Tanaka ◽  
M. Oshiki
Keyword(s):  
Giant Magnetoresistance

Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe
Keyword(s):  
Charge Transfer ◽  
Chemical Modification ◽  
Electronic Transport ◽  
Hole Transport ◽  
Electron Acceptors ◽  
Oxygen Atmosphere ◽  
Dangling Bonds ◽  
Silicon Based ◽  
Deposited Films

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

Novel organic, polymeric materials for electronics applications

2002 ◽  
Vol 722 ◽  
Author(s):  
Ram W. Sabnis ◽  
Mary J. Spencer ◽  
Douglas J. Guerrero
Keyword(s):  
Optical Density ◽  
Chemical Vapor ◽  
Polymeric Materials ◽  
Substantial Improvement ◽  
Polymeric Systems ◽  
Patterned Wafers ◽  
Visible Spectra ◽  
Potential Applications ◽  
Deep Ultraviolet ◽  
Deposited Films

AbstractNovel organic, polymeric materials and processes of depositing thin films on electronics substrates by chemical vapor deposition (CVD) have been developed and the lithographic behavior of photoresist coated over these CVD films at deep ultraviolet (DUV) wavelength has been evaluated. The specific monomers synthesized for DUV applications include [2.2](1,4)- naphthalenophane, [2.2](9,10)-anthracenophane and their derivatives which showed remarkable film uniformity on flat wafers and conformality over structured topography wafers, upon polymerization by CVD. The chemical, physical and optical properties of the deposited films have been characterized by measuring parameters such as thickness uniformity, solubility, conformality, adhesion to semiconductor substrates, ultraviolet-visible spectra, optical density, optical constants, defectivity, and resist compatibility. Scanning electron microscope (SEM) photos of cross-sectioned patterned wafers showed verticle profiles with no footing, standing waves or undercut. Resist profiles down to 0.10 νm dense lines and 0.09 νm isolated lines were achieved in initial tests. CVD coatings generated 96-100% conformal films, which is a substantial improvement over commercial spin-on polymeric systems. The light absorbing layers have high optical density at 248 nm and are therefore capable materials for DUV lithography applications. CVD is a potentially useful technology to extend lithography for sub-0.15 νm devices. These films have potential applications in microelectronics, optoelectronics and photonics.

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