The Microstructure and Giant Magnetoresistance of NiFeAg Thin Films

ABSTRACTAlthough Much has been published on giant Magnetoresistance (GMR) in co-deposited thin films [1–4], only little [5] has been published on the structure-property relationships limiting the effect. Here, we report the results of microstructural characterization of NiFeAg thin films that exhibit a GMR effect. The as-deposited films show a sizeable GMR effect. The Maximum GMR effect observed was 6.4% with -4k0e FWHM of the 6P/P peak. Upon annealing these films, the GMR at first increases, and then decreases. We present microstructural evidence from TEM and XRD, amongst other techniques, which shows that this is a consequence of the initial NiFeAg thin film agglomerating into NiFe grains in a predominantly Ag segregant Matrix. Upon extended annealing, excessive grain growth leads to a decrease in the GMR as predicted by the model of Berkowitz, et al. [1].

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Microstructural characterization of abnormal grain growth behavior of Al-doped ZnO in thin film solar cells

Surface and Interface Analysis ◽

10.1002/sia.4967 ◽

2012 ◽

Vol 44 (11-12) ◽

pp. 1427-1430

Author(s):

Hui-Youn Shin ◽

M. H. Joo ◽

S. K. Moon ◽

T. H. Moon ◽

K. H. Park

Keyword(s):

Thin Film ◽

Solar Cells ◽

Grain Growth ◽

Microstructural Characterization ◽

Growth Behavior ◽

Abnormal Grain Growth ◽

Thin Film Solar Cells ◽

Doped Zno ◽

Grain Growth Behavior

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RF Magnetron Sputtered Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films for High Frequency Applications

MRS Proceedings ◽

10.1557/proc-833-g1.2 ◽

2004 ◽

Vol 833 ◽

Author(s):

Ali Mahmud ◽

T. S. Kalkur ◽

N. Cramer

Keyword(s):

Thin Film ◽

Thin Films ◽

Dielectric Constant ◽

Substrate Temperature ◽

High Frequency ◽

Satellite Communications ◽

Ferroelectric Thin Films ◽

Paraelectric State ◽

Deposited Films

ABSTRACTPerovskite ferroelectric thin films in the paraelectric state exhibit outstanding dielectric properties, even at high frequencies (>1 GHz). The tunable dielectric constant of ferroelectric thin films can be used to design frequency and phase agile components. High dielectric constant thin film ferroelectric materials in the paraelectric state have received enormous attention due to their feasibility in applications such as decoupling capacitors and tunable microwave capacitors; the latter application has been fueled by the recent explosion in wireless and satellite communications. This paper reportsBa0.96Ca 0.04Ti0.84Zr0.16O3 (BCTZ) thin films that were deposited on Pt electrodes using radio frequency magnetron sputtering at a low (450 °C) substrate temperature. Sputtered thin film BCTZ at low substrate temperature is compatible with conventional integrated circuit technology. The structural characterization of the deposited films was performed by x-ray diffraction. The electrical characterization of the films was achieved by capacitance-voltage, current-voltage, and S-parameter (via vector network analyzer) measurements. In addition, the effect of post annealing on the deposited films was investigated. A detailed understanding of both their processing and material properties is discussed for successful implementation in high frequency applications.

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Characterization of Thermally Evaporated Ag-Ge-S Thin Films

MRS Proceedings ◽

10.1557/proc-1072-g03-21 ◽

2008 ◽

Vol 1072 ◽

Author(s):

Fei Wang ◽

William Porter Dunn ◽

Mukul Jain ◽

Carter De Leo ◽

Nicholas Vicker ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Raman Spectroscopy ◽

Film Thickness ◽

Raman Line ◽

Line Shapes ◽

Thermal Evaporator ◽

Bulk Glasses ◽

Deposited Films

ABSTRACTThin films of ternary (GeS3)1−xAgx glasses (x=0.1 and 0.2) are studied in this work. Thin films are fabricated in a vacuum thermal evaporator at 3 different evaporation angles (0°, 30° and 45°). All thin film samples are examined in Raman spectroscopy. Raman results of both normally and obliquely deposited thin film samples reveal Ge-S CS modes (∼340cm−1) , Ge-S ES (∼360cm−1) modes, and thiogermanate modes Q1∼Q3 (390cm−1∼437cm−1). In addition, sharp peaks due to sulfur rings (S8) are observed at 218cm−1 and 470cm−1. Raman line-shapes of thin films are qualitatively consistent with their corresponding bulk glasses. However, the sharp peaks due to sulfur rings were not observed in bulk glasses. By comparing CS modes of thin films of three angles, we observe that normally deposited (0 degree) thin film shows a red-shift in center and a broadening in width. The film thickness of normally deposited films are significantly smaller comparing with that of corresponding obliquely deposited films.

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Combinatorial Screening of Polymer/Fullerene Blends for Solar Cells by Inkjet Printing

MRS Proceedings ◽

10.1557/opl.2012.646 ◽

2012 ◽

Vol 1390 ◽

Cited By ~ 1

Author(s):

Anke Teichler ◽

Jolke Perelaer ◽

Ulrich S. Schubert

Keyword(s):

Thin Film ◽

Inkjet Printing ◽

Structure Property ◽

Combinatorial Screening ◽

Film Properties ◽

Solution Deposition ◽

Structure Property Relationships ◽

Patterning Technique ◽

Preparation Parameter

ABSTRACTInkjet printing is a highly material-efficient solution deposition technique that enables the preparation of thin-film libraries using little amounts of materials. As a reproducible and precise patterning technique inkjet printing can be integrated into a combinatorial screening workflow that allowed the systematic characterization of thin-film properties of newly developed materials as well as the methodical investigation of preparation parameter that influence the performance of the inkjet printed layers.This contribution provides a demonstration of a combinatorial screening workflow that utilizes inkjet printing to evaluate structure-property relationships of polymer/fullerene blends for the application in organic photovoltaics. Using this approach it is shown that optimized blend compositions as well as printing conditions lead to improved performances of organic solar cell devices.

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Microstructural characterization of YBaCuO thin films deposited by rf magnetron sputtering as a function of annealing conditions

Journal of Materials Research ◽

10.1557/jmr.1991.0252 ◽

1991 ◽

Vol 6 (2) ◽

pp. 252-263 ◽

Cited By ~ 6

Author(s):

M. Ece ◽

R.W. Vook ◽

John P. Allen

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Buffer Layer ◽

Microstructural Characterization ◽

Rf Magnetron Sputtering ◽

Flash Evaporation ◽

Annealing Conditions ◽

Deposited Films

Thin films of Y1Ba2Cu3O7−x have been prepared on MgO, SrTiO3/Al2O3, and Al2O3 substrates by rf magnetron sputtering. A buffer layer of SrTiO3 was deposited on Al2O3 by flash evaporation. The as-deposited films on MgO and SrTiO

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Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100089718 ◽

1991 ◽

Vol 49 ◽

pp. 1080-1081

Author(s):

P. Lu ◽

W. Huang ◽

C.S. Chern ◽

Y.Q. Li ◽

J. Zhao ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Critical Current Density ◽

Critical Current ◽

Current Density ◽

Film Growth ◽

Chemical Vapor ◽

Microstructural Characterization ◽

Ion Milling ◽

Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

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Characterization of the order-annealing response of nanostructured iron-palladium based ferromagnetic thin-films

MRS Proceedings ◽

10.1557/proc-703-v3.4 ◽

2001 ◽

Vol 703 ◽

Author(s):

Huiping Xu ◽

Adam T. Wise ◽

Timothy J. Klemmer ◽

Jörg M. K. Wiezorek

Keyword(s):

Thin Films ◽

Grain Growth ◽

Room Temperature ◽

Si Substrate ◽

Ferromagnetic Thin Films ◽

Precipitation Reactions ◽

Post Deposition ◽

Xrd And Tem ◽

Iron Palladium

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

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Optical and microstructural characterization of nanocrystalline Cu doped ZnO diluted magnetic semiconductor thin film for optoelectronic applications

Optical Materials ◽

10.1016/j.optmat.2021.111312 ◽

2021 ◽

Vol 119 ◽

pp. 111312

Author(s):

Gharieb A. Ali ◽

M. Emam-Ismail ◽

M. El-Hagary ◽

E.R. Shaaban ◽

S.H. Moustafa ◽

...

Keyword(s):

Thin Film ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Microstructural Characterization ◽

Doped Zno ◽

Semiconductor Thin Film ◽

Optoelectronic Applications ◽

Diluted Magnetic

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Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽

10.1557/adv.2016.510 ◽

2016 ◽

Vol 1 (39) ◽

pp. 2711-2716 ◽

Cited By ~ 2

Author(s):

V. Vasilyev ◽

J. Cetnar ◽

B. Claflin ◽

G. Grzybowski ◽

K. Leedy ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Pyroelectric Coefficient ◽

X Ray Diffraction ◽

Ir Detectors ◽

Pyroelectric Properties ◽

X Ray ◽

Sensing Applications ◽

Pyroelectric Material ◽

Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

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