Microstructure-induced Schottky barrier effects in barium strontium titanate (BST) thin films for 16 and 64 Mbit (DRAM cells)

2003 ◽  
Author(s):  
J.F. Scott ◽  
M. Azuma ◽  
E. Fujii ◽  
T. Otsuki ◽  
G. Kano ◽  
...  
Keyword(s):  
Thin Films ◽  
Schottky Barrier ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Bst Thin Films ◽  
Barrier Effects ◽  
Barium Strontium

TUNABLE BAND-PASS FILTER USING INTERDIGITAL CAPACITOR BY BARIUM STRONTIUM TITANATE (BST) THIN FILMS

2006 ◽  
Vol 86 (1) ◽  
pp. 141-148 ◽  
Author(s):  
TAE-SOON YUN ◽  
HEE NAM ◽  
KI-CHUL YOON ◽  
JONG-CHUL LEE ◽  
HYUN-SUK KIM ◽  
...  
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Bst Thin Films ◽  
Interdigital Capacitor ◽  
Barium Strontium ◽  
Band Pass

XPS Study on Barium Strontium Titanate (BST) Thin Films Etching in SF6/Ar Plasma

2011 ◽  
Vol 415-417 ◽  
pp. 1964-1968 ◽  
Author(s):  
Li Ping Dai ◽  
Guo Jun Zhang ◽  
Shu Ya Wang ◽  
Zhi Qin Zhong
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Chemical Reaction ◽  
Barium Strontium Titanate ◽  
Metal Species ◽  
Ion Etching ◽  
X Ray ◽  
Bst Thin Films ◽  
Barium Strontium ◽  
Ar Plasma

Subscript textReactive ion etching of barium strontium titanate (BST) thin films using an SF6/Ar plasma has been studied. BST surfaces before and after etching were analyzed by X-ray photoelectron spectroscopy to investigate the reaction ion etching mechanism, and chemical reactions had occurred between the F plasma and the Ba, Sr and Ti metal species. Fluorides of these metals were formed and some remained on the surface during the etching process. Ti can be removed completely by chemical reaction because the TiF4by-product is volatile. Minor quantities of Ti-F could still be detected by narrow scan X-ray photoelectron spectra, which was thought to be present in metal-oxy-fluoride(Metal-O-F). These species were investigated from O1sspectra, and a fluoride-rich surface was formed during etching because the high boiling point BaF2and SrF2residues are hard to remove. The etching rate was limited to 14.28nm/min. A 1-minute Ar/10 plasma physical sputtering was carried out for every 4 minutes of surface etching, which effectively removed remaining surface residue. Sequential chemical reaction and sputtered etching is an effective etching method for BST films.

scholarly journals Etching mechanism of barium strontium titanate (BST) thin films in CHF3/Ar plasma

2011 ◽  
Vol 56 (21) ◽  
pp. 2267-2271 ◽  
Author(s):  
LiPing Dai ◽  
ShuYa Wang ◽  
Ping Shu ◽  
ZhiQin Zhong ◽  
Gang Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Bst Thin Films ◽  
Etching Mechanism ◽  
Barium Strontium ◽  
Ar Plasma

RELIABILITY OF BARIUM STRONTIUM TITANATE (BST) THIN FILMS

2009 ◽  
Vol 105 (1) ◽  
pp. 11-17 ◽  
Author(s):  
HONGWEI CHEN ◽  
CHUANREN YANG ◽  
BO WANG ◽  
JIHUA ZHANG ◽  
AN YU
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Bst Thin Films ◽  
Barium Strontium

OPTICAL AND STRUCTURAL PROPERTIES OF NANO-SIZED BARIUM STRONTIUM TITANATE (Ba0.6Sr0.4TiO3) THIN FILM

2008 ◽  
Vol 22 (09) ◽  
pp. 693-700 ◽  
Author(s):  
S. BOBBY SINGH ◽  
H. B. SHARMA ◽  
H. N. K. SARMA ◽  
SUMITRA PHANJOUBAM
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sol Gel ◽  
Processing Technique ◽  
Cubic Phase ◽  
Bst Thin Films ◽  
Barium Strontium ◽  
Free Films ◽  
Quartz Substrates

Barium strontium titanate ( Ba 0.6 Sr 0.4 TiO 3) or BST thin films on quartz substrates have been prepared by using a modified sol-gel processing technique. The starting materials are barium 2-ethylhexanoate Ba[CH 3( CH 2)3 CH(C 2 H 5) CO 2]2, strontium 2-ethylhexanoate Sr[CH 3( CH 2)3 CH(C 2 H 5) CO 2]2 and titanium (IV) isopropoxide Ti[CH 3 CH 3 CHO ]4. The precursors Ti[CH 3 CH 3 CHO ]4 except were synthesized in the laboratory. Transparent and crack-free films were fabricated on quartz substrates by spin coating. The as-fired films were found to be amorphous, which crystallized to cubic phase after annealing at 550°C in air for 1 hr. In this paper, we report the structural and optical properties of BST thin films prepared by the modified sol-gel process.

Electrical and Structural Diagnostics of Barium Strontium Titanate (BST) Thin Films

2011 ◽  
Vol 1292 ◽  
Author(s):  
Supriya Ketkar ◽  
Manoj Kumar Ram ◽  
Ashok Kumar ◽  
Thomas Weller ◽  
Andrew Hoff
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Film Structure ◽  
Production Costs ◽  
Bst Thin Films ◽  
Barium Strontium ◽  
Metal Insulator Metal

ABSTRACTThe properties of radio frequency, rf magnetron sputtered Barium Strontium Titanate (Ba1-xSrxTiO3), BST, thin films were investigated and compared with BST thin films deposited by sol-gel method with the aim of determining relationships between the oxide deposition parameters, the film structure, and the electric field dependence. This work presents noncontact electrical characterization of BST films using Corona Kelvin metrology (C-KM) which has been employed earlier only in the silicon industry. The films were structurally characterized using thickness profilometer, X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques. The use of sol-gel technique to fabricate small area metal-insulator-metal (MIM) structures is found to be beneficial from the point of saving fabrication time and production costs.

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