Effects of Al Pad Deformation and TiW Barrier Layer on Copper-to-Silicon Diffusion and Intermetallic Compound Formation in Copper Wire Bonding

2006 ◽  
Author(s):  
S. Zhang ◽  
C. Chen ◽  
R. Lee ◽  
A.K.M. Lau ◽  
P.P.H. Tsang ◽  
...  
Keyword(s):  
Intermetallic Compound ◽  
Barrier Layer ◽  
Copper Wire ◽  
Wire Bonding ◽  
Compound Formation ◽  
Intermetallic Compound Formation ◽  
Copper Wire Bonding ◽  
Silicon Diffusion

Characteristics of Copper-to-Silicon diffusion in copper wire bonding

2007 ◽  
Author(s):  
Shawn X. Zhang ◽  
S. W. Ricky Lee ◽  
A. K. M. Lau ◽  
P. P. H. Tsang ◽  
L. Mohamed ◽  
...  
Keyword(s):  
Copper Wire ◽  
Wire Bonding ◽  
Copper Wire Bonding ◽  
Silicon Diffusion

Failure Analysis on Power Trench MOSFET Devices with Copper Wire Bonds

2011 ◽  
Author(s):  
Huixian Wu ◽  
Arthur Chiang ◽  
David Le ◽  
Win Pratchayakun
Keyword(s):  
Failure Analysis ◽  
Copper Wire ◽  
New Technology ◽  
Analytical Techniques ◽  
Wire Bonding ◽  
Bonding Process ◽  
Wire Bonds ◽  
Copper Wire Bonding ◽  
Wet Chemical ◽  
Microelectronic Components

Abstract With gold prices steadily going up in recent years, copper wire has gained popularity as a means to reduce cost of manufacturing microelectronic components. Performance tradeoff aside, there is an urgent need to thoroughly study the new technology to allay any fear of reliability compromise. Evaluation and optimization of copper wire bonding process is critical. In this paper, novel failure analysis and analytical techniques are applied to the evaluation of copper wire bonding process. Several FA/analytical techniques and FA procedures will be discussed in detail, including novel laser/chemical/plasma decapsulation, FIB, wet chemical etching, reactive ion etching (RIE), cross-section, CSAM, SEM, EDS, and a combination of these techniques. Two case studies will be given to demonstrate the use of these techniques in copper wire bonded devices.

Effect of adding Ag to the medium entropy SnBiIn alloy on intermetallic compound formation

2020 ◽  
Vol 272 ◽  
pp. 127891 ◽  
Author(s):  
Li Pu ◽  
Yingxia Liu ◽  
Yong Yang ◽  
Quanfeng He ◽  
Ziqing Zhou ◽  
...  
Keyword(s):  
Intermetallic Compound ◽  
Compound Formation ◽  
Intermetallic Compound Formation

scholarly journals Development of high reliability semiconductor devices by copper wire bonding.

1988 ◽  
Vol 27 (4) ◽  
pp. 299-301
Author(s):  
J. Hirota ◽  
Y. Shibutani ◽  
T. Sugimura ◽  
K. Machida ◽  
T. Okuda
Keyword(s):  
High Reliability ◽  
Copper Wire ◽  
Semiconductor Devices ◽  
Wire Bonding ◽  
Copper Wire Bonding
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