Self-powered sensing and time-stamping of rare events using CMOS Fowler-Nordheim tunneling timers

Author(s):  
Liang Zhou ◽  
Shantanu Chakrabartty
2020 ◽  
Vol 39 (6) ◽  
pp. 8463-8475
Author(s):  
Palanivel Srinivasan ◽  
Manivannan Doraipandian

Rare event detections are performed using spatial domain and frequency domain-based procedures. Omnipresent surveillance camera footages are increasing exponentially due course the time. Monitoring all the events manually is an insignificant and more time-consuming process. Therefore, an automated rare event detection contrivance is required to make this process manageable. In this work, a Context-Free Grammar (CFG) is developed for detecting rare events from a video stream and Artificial Neural Network (ANN) is used to train CFG. A set of dedicated algorithms are used to perform frame split process, edge detection, background subtraction and convert the processed data into CFG. The developed CFG is converted into nodes and edges to form a graph. The graph is given to the input layer of an ANN to classify normal and rare event classes. Graph derived from CFG using input video stream is used to train ANN Further the performance of developed Artificial Neural Network Based Context-Free Grammar – Rare Event Detection (ACFG-RED) is compared with other existing techniques and performance metrics such as accuracy, precision, sensitivity, recall, average processing time and average processing power are used for performance estimation and analyzed. Better performance metrics values have been observed for the ANN-CFG model compared with other techniques. The developed model will provide a better solution in detecting rare events using video streams.


1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.


2020 ◽  
Vol 13 (12) ◽  
pp. 121001
Author(s):  
Wei Qu ◽  
Shukun Weng ◽  
Liping Zhang ◽  
Min Sun ◽  
Bo Liu ◽  
...  
Keyword(s):  

2002 ◽  
Author(s):  
Brady Krass ◽  
Charles Hannon ◽  
Joseph Gerstmann
Keyword(s):  

2016 ◽  
Vol 8 (29) ◽  
pp. 19158-19167 ◽  
Author(s):  
Zhimin Liang ◽  
Pingyang Zeng ◽  
Pengyi Liu ◽  
Chuanxi Zhao ◽  
Weiguang Xie ◽  
...  

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