scholarly journals Neural Microprobe Device Modelling for Implant Micromotions Failure Mitigation

2020 ◽  
Author(s):  
Vahid Nabaei ◽  
Gabriella Panuccio ◽  
Hadi Heidari
Keyword(s):  
Failure Mitigation ◽  
Device Modelling

scholarly journals Device modelling and model verification for the Euclid CCD273 detector

2012 ◽  
Author(s):  
A. Clarke ◽  
D. Hall ◽  
N. Murray ◽  
A. Holland ◽  
D. Burt
Keyword(s):  
Model Verification ◽  
Device Modelling

scholarly journals Impact of Mole Fraction Variation on Nanoscale SiGe Hybrid FinFET on Insulator

2019 ◽  
Vol 8 (12S2) ◽  
pp. 61-66
Keyword(s):  
Band Gap ◽  
Mole Fraction ◽  
High Performance ◽  
Device Simulation ◽  
Channel Length ◽  
Gate Length ◽  
Electrical Characteristics ◽  
Simulation Results ◽  
High Performance Application ◽  
Device Modelling

This work investigates the performance of SiGe Hybrid JunctionLess FinFET (HJLFinFET) on insulator with different mole fraction x. The band gap difference for different mole fractions are explored. Impact of electrical characteristics and SCE of HJLFinFET are analyzed with fin width 10nm and varying gate length from 5nm-40nm for different mole fraction. Synopsys Sentaurus TCAD tool(sprocess and sdevice) are used in Device modelling and device simulation. Simulation results shows improvement in On current, DIBL and SS. For high performance application SiGe with mole fraction less than 0.3 at channel length less than 10nm are suitable because of the bandgap value is similar to silicon.

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