An Area-efficient Low Quiescent Current Output Capacitor-less LDO with Fast Transient Response

Author(s):  
Hongchang Qiao ◽  
Chenchang Zhan ◽  
Quan Pan ◽  
Yutian Chen ◽  
Ning Zhang
2021 ◽  
Author(s):  
Mengjie Song ◽  
Chenchang Zhan ◽  
Lidan Wang ◽  
Litao Wu ◽  
Bangdong Sun

2018 ◽  
Vol 27 (09) ◽  
pp. 1850143
Author(s):  
Shuangxing Zhao ◽  
Chenchang Zhan ◽  
Guigang Cai

This paper presents a [Formula: see text]-enabled output-capacitor-free CMOS low-dropout (LDO) regulator with fast transient response for cost-effective system-on-chip (SoC) power management applications with elevated-[Formula: see text] supply. All the MOS transistors used in the proposed LDO regulator are low voltage (LV) MOSFETs, hence saving the high voltage devices fabrication cost required in a conventional design. Two LV power transistors are cascaded in the power train. A mid-rail regulator is used to generate [Formula: see text] voltage for the power transistors as well as the main error amplifier to guarantee safe operation. The mid-rail regulator employs stacking transistors to handle the high supply voltage. Moreover, Miller compensation with adaptive biasing is used to achieve good stability and fast transient response. A proof-of-concept design is fabricated in a standard 0.18-[Formula: see text]m CMOS process which achieves 3.3–3.6[Formula: see text]V nominal input, 3.1[Formula: see text]V nominal output and 100[Formula: see text]mA loading capability with all the transistors being 1.8[Formula: see text]V MOSFETs.


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