A Hybrid-Mode LDO Regulator with Fast Transient Response Performance for IoT applications

A hybrid-mode low-drop out (LDO) voltage regulator with fast transient response performance for IoT applications is proposed in this paper. The proposed LDO regulator consist of two sections. First section is an analog regulator which includes a folded cascode operational amplifier to achieve good PSRR. Second section is current DAC and detectors whitch includes a cource current DAC, sink current DAC, undershoot detectors, and overshoot detectors. The current DAC and detectors are designed to obtain a low drop out and fast transient response. The proposed hybrid-mode LDO voltage regulator has been designed, simulated and layouted in Cadence using TSMC 90 nm CMOS technology. The input range of the LDO regulator is 1.2–2.0 V, and it can produces an output voltage of 1.2V. The LDO regulator achieves 58uA quiescent current, -69 PSRR @ 1 KHz noise frequency and an output voltage drop of around 60mV for a load current step of 100 mA. The final design occupies approximately 0.09 mm2.

A Fully-Integrated 180 nm CMOS 1.2 V Low-Dropout Regulator for Low-Power Portable Applications

This paper presents the design and postlayout simulation results of a capacitor-less low dropout (LDO) regulator fully integrated in a low-cost standard 180 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology which regulates the output voltage at 1.2 V from a 3.3 to 1.3 V battery over a –40 to 120°C temperature range. To meet with the constraints of system-on-chip (SoC) battery-operated devices, ultralow power (Iq = 8.6 µA) and minimum area consumption (0.109 mm2) are maintained, including a reference voltage Vref = 0.4 V. It uses a high-gain dynamically biased folded-based error amplifier topology optimized for low-voltage operation that achieves an enhanced regulation-fast transient performance trade-off.

Capacitor-less Low-Dropout Regulator for Analog Sensing using 90nm Technology

The capacitor-less-output-low-dropout (CLO-LDO) regulator proposed in this study can manage a wide variety of load currents. To offer temperature independent controlled LDO output, the LDO's 0.844V reference voltage is obtained using BGR, the optimized design is presented that provide full range stability, fast transient response. These benefits allow the proposed LDO regulator to operate over a wide range of operating circumstances, with very high current efficiency 99.99% and low voltage drop 100mV, operating using very low quiescent current of 0.02µA, at the output of regulator. The proposed regulator design is constructed in 90nm CMOS technology, the structure of the regulator is implemented using a Two-stage operational amplifier to obtain large DC gain 50dB to improve supply noise rejection, and a feedback loop, and exhibits better performance in terms of large phase margin 64.516 degrees with no load and 70.63degree full load.

An 8–12.5-GHz LC PLL with Dual VCO and Noise-Reduced LDO Regulator for Multilane Multiprotocol SerDes in 28-nm CMOS Technology

This study presents an inductance capacitance (LC) phase-locked loop (PLL) with a dual voltage-controlled oscillator (VCO) and a noise-reduced low-dropout (LDO) regulator, which was used in four-lane multiprotocol serial link applications. The dual VCO architecture can increase the total frequency-tuning range to ensure that the LC PLL achieves multiprotocol serial link coverage from 8 to 12.5 Gbps. Two switch capacitor array-based LC VCOs have a large frequency-tuning range and small VCO gain. The noise-reduced LDO regulator provides a very low-noise power supply to the VCO. The active area occupied by the proposed LC PLL in UMC 28-nm 1P10M complementary metal–oxide–semiconductor (CMOS) technology is 0.25 mm2. The phase noise of the VCO at 1 MHz is −108.1 dBc/Hz. The power consumption of the LC PLL with a 1.8-V supply is 16.5 mW.

A 0.18-ns Response Time Digital LDO Regulator with Adaptive PI Controller in 180-nm CMOS

Digital low drop-out regulator (D-LDO) with fast settling time and superior transient response is gaining increasing attention to make up for the deficiency of analog LDO. However, as the traditional digital LDOs regulate the output voltage code at a rate of 1 bit per clock cycle, the transient response speed is limited. In this paper, a multi-bit conversion technique is proposed to improve the transient response speed. The multi-bit conversion technique is achieved by an error detector with adaptive regulation of proportion and integration parameters in the digital controller before pass devices. Besides, a voltage sensor and a time-to-digital converter are employed to convert the output voltage to digital codes. Implemented in a 180-nm CMOS process, the proposed D-LDO features under 36/33 mV of undershoot/overshoot at VOUT = 0.95 V as the load current steps up with 40 mA/1 ns on a 0.5 nF load capacitor. The simulated response time is 0.18-ns, the figure-of-merit of speed FOM1 is 0.65 ps and FOM2 achieves 0.068 pF.

Design of a Low-Noise, Fast Set-up and Low-Voltage Low-Dropout Regulator Featuring 230mA Load Current Range

Low noise, high PSRR and fast transient low-dropout (LDO) regulators are critical for analog blocks such as ADCs, PLLs and RF SOC, etc. This paper presents design of low power, fast transient, high PSRR and high load-regulation low-dropout (LDO) regulator. The proposed LDO regulator is designed in 180nm. CMOS process and simulated in LTSpice and Cadence platform. The LDO proposed can support input voltage range up to 5V for loading currents up to 230mA. Measurements showed transient time or set-up time of less than 22µs, PSRR of ~66dB at 100kHz and >40dB at 1MHz and 0.8535mV of output voltage variation for a 0-230mA of load variation.

Design of a Low-Noise, Fast Set-up and Low-Voltage Low-Dropout Regulator Featuring 230mA Load Current Range

Low noise, high PSRR and fast transient low-dropout (LDO) regulators are critical for analog blocks such as ADCs, PLLs and RF SOC, etc. This paper presents design of low power, fast transient, high PSRR and high load-regulation low-dropout (LDO) regulator. The proposed LDO regulator is designed in 180nm. CMOS process and simulated in LTSpice and Cadence platform. The LDO proposed can support input voltage range up to 5V for loading currents up to 230mA. Measurements showed transient time or set-up time of less than 22µs, PSRR of ~66dB at 100kHz and >40dB at 1MHz and 0.8535mV of output voltage variation for a 0-230mA of load variation.

Design of a Low-Noise, Fast Set-up and Low-Voltage Low-Dropout Regulator Featuring 230mA Load Current Range

Low noise, high PSRR and fast transient low-dropout (LDO) regulators are critical for analog blocks such as ADCs, PLLs and RF SOC, etc. This paper presents design of low power, fast transient, high PSRR and high load-regulation low-dropout (LDO) regulator. The proposed LDO regulator is designed in 180nm. CMOS process and simulated in LTSpice and Cadence platform. The LDO proposed can support input voltage range up to 5V for loading currents up to 230mA. Measurements showed transient time or set-up time of less than 22µs, PSRR of ~66dB at 100kHz and >40dB at 1MHz and 0.8535mV of output voltage variation for a 0-230mA of load variation.