Gate dielectric engineering of sub quarter micron AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor (MISHFET) for high gain characteristics

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422371 ◽

2007 ◽

Author(s):

Ruchika Aggarwal ◽

Anju Agrawal ◽

Mridula Gupta ◽

R.S. Gupta

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

High Gain ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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AlN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.4481 ◽

2002 ◽

Vol 41 (Part 1, No. 7A) ◽

pp. 4481-4483 ◽

Author(s):

Dong-Hyun Cho ◽

Mitsuaki Shimizu ◽

Toshihide Ide ◽

Hideyuki Ookita ◽

Hajime Okumura

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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Sputtered amorphous AlN gate dielectric for AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor

10.7567/ssdm.2011.a-1-6 ◽

2011 ◽

Author(s):

H. A. Shih ◽

M. Kudo ◽

M. Akabori ◽

T. Suzuki

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.090204 ◽

2013 ◽

Vol 52 (9R) ◽

pp. 090204 ◽

Author(s):

Herwig Hahn ◽

Fouad Benkhelifa ◽

Oliver Ambacher ◽

Assadullah Alam ◽

Michael Heuken ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Semiconductor Heterostructure ◽

Effect Transistor ◽

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In situ capped GaN-based metal-insulator-semiconductor heterostructure field-effect transistor

2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS) ◽

10.1109/peds.2013.6527159 ◽

2013 ◽

Author(s):

Ping-Chuan Chang ◽

Kai-Hsuan Lee

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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Demonstration of enhancement-mode GaAs metal-insulator-semiconductor field effect transistor with channel inversion using Si3N4 as gate dielectric

Applied Physics Letters ◽

10.1063/1.2943148 ◽

2008 ◽

Vol 92 (23) ◽

pp. 232904 ◽

Author(s):

J. F. Zheng ◽

W. Tsai ◽

W. P. Li ◽

X. W. Wang ◽

T. P. Ma

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Effect Transistor

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AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

Applied Physics Letters ◽

10.1063/1.3651495 ◽

2011 ◽

Vol 99 (15) ◽

pp. 153505 ◽

Author(s):

K. H. Lee ◽

P. C. Chang ◽

S. J. Chang

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Cap Layer ◽

Effect Transistor

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Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bf01 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BF01 ◽

Author(s):

Hong-An Shih ◽

Masahiro Kudo ◽

Masashi Akabori ◽

Toshi-kazu Suzuki

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bf01 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BF01 ◽

Author(s):

Hong-An Shih ◽

Masahiro Kudo ◽

Masashi Akabori ◽

Toshi-kazu Suzuki

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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The gas sensitivity of a metal-insulator-semiconductor field-effect-transistor based on Langmuir–Blodgett films of a new asymmetrically substituted phthalocyanine

Thin Solid Films ◽

10.1016/s0040-6090(99)01081-0 ◽

2000 ◽

Vol 360 (1-2) ◽

pp. 256-260 ◽

Author(s):

Wenping Hu ◽

Yunqi Liu ◽

Yu Xu ◽

Shenggao Liu ◽

Shuqin Zhou ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gas Sensitivity ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Langmuir Blodgett ◽

Langmuir Blodgett Films ◽

Effect Transistor

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