GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm
2013 ◽
Vol 52
(9R)
◽
pp. 090204
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2017 ◽
Vol 71
(4)
◽
pp. 185-190
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Keyword(s):
2002 ◽
Vol 41
(Part 1, No. 7A)
◽
pp. 4481-4483
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2007 ◽
Vol 46
(4B)
◽
pp. 2348-2351
◽
Keyword(s):