AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

Applied Physics Letters ◽

10.1063/1.3651495 ◽

2011 ◽

Vol 99 (15) ◽

pp. 153505 ◽

Author(s):

K. H. Lee ◽

P. C. Chang ◽

S. J. Chang

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Cap Layer ◽

Effect Transistor

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In situ capped GaN-based metal-insulator-semiconductor heterostructure field-effect transistor

2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS) ◽

10.1109/peds.2013.6527159 ◽

2013 ◽

Author(s):

Ping-Chuan Chang ◽

Kai-Hsuan Lee

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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AlN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.4481 ◽

2002 ◽

Vol 41 (Part 1, No. 7A) ◽

pp. 4481-4483 ◽

Author(s):

Dong-Hyun Cho ◽

Mitsuaki Shimizu ◽

Toshihide Ide ◽

Hideyuki Ookita ◽

Hajime Okumura

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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Gate dielectric engineering of sub quarter micron AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor (MISHFET) for high gain characteristics

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422371 ◽

2007 ◽

Author(s):

Ruchika Aggarwal ◽

Anju Agrawal ◽

Mridula Gupta ◽

R.S. Gupta

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

High Gain ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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Electron mobility improvement by in situ annealing before deposition of HfO2gate dielectric with equivalent oxide thickness of sub-1.0 nm in In0.53Ga0.47As n-type metal–insulator–semiconductor field-effect transistor

Applied Physics Express ◽

10.7567/apex.7.061202 ◽

2014 ◽

Vol 7 (6) ◽

pp. 061202

Author(s):

Minoru Oda ◽

Toshifumi Irisawa ◽

Wipakorn Jevasuwan ◽

Tatsuro Maeda ◽

Yuuichi Kamimuta ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Thickness ◽

Equivalent Oxide Thickness ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.090204 ◽

2013 ◽

Vol 52 (9R) ◽

pp. 090204 ◽

Author(s):

Herwig Hahn ◽

Fouad Benkhelifa ◽

Oliver Ambacher ◽

Assadullah Alam ◽

Michael Heuken ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Semiconductor Heterostructure ◽

Effect Transistor ◽

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Impact of in situ SiN[sub x] layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3186615 ◽

2009 ◽

Vol 27 (5) ◽

pp. 2079 ◽

Author(s):

E. Cho ◽

S. Seo ◽

C. Jin ◽

D. Pavlidis ◽

G. Fu ◽

...

Keyword(s):

Optical Properties ◽

Vapor Phase ◽

Field Effect ◽

Field Effect Transistor ◽

Electrical And Optical Properties ◽

Metal Insulator ◽

Organic Vapor ◽

Metal Organic ◽

Effect Transistor

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The gas sensitivity of a metal-insulator-semiconductor field-effect-transistor based on Langmuir–Blodgett films of a new asymmetrically substituted phthalocyanine

Thin Solid Films ◽

10.1016/s0040-6090(99)01081-0 ◽

2000 ◽

Vol 360 (1-2) ◽

pp. 256-260 ◽

Author(s):

Wenping Hu ◽

Yunqi Liu ◽

Yu Xu ◽

Shenggao Liu ◽

Shuqin Zhou ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gas Sensitivity ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Langmuir Blodgett ◽

Langmuir Blodgett Films ◽

Effect Transistor

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TCAD simulation of a breakdown-enhanced double channel GaN metal–insulator–semiconductor field-effect transistor with a P-buried layer

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab81b3 ◽

2020 ◽

Vol 35 (6) ◽

pp. 065012

Author(s):

Xin-Xing Fei ◽

Ying Wang ◽

Xin Luo ◽

Meng-Tian Bao ◽

Cheng-Hao Yu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor ◽

Buried Layer ◽

Tcad Simulation ◽

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Monolithic integration of a very low threshold GaInAsP laser and metal‐insulator‐semiconductor field‐effect transistor on semi‐insulating InP

Applied Physics Letters ◽

10.1063/1.93226 ◽

1982 ◽

Vol 40 (8) ◽

pp. 643-645 ◽

Author(s):

U. Koren ◽

K. L. Yu ◽

T. R. Chen ◽

N. Bar‐Chaim ◽

S. Margalit ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Threshold ◽

Effect Transistor

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A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor

Semiconductor Science and Technology ◽

10.1088/0268-1242/16/12/309 ◽

2001 ◽

Vol 16 (12) ◽

pp. 997-1001 ◽

Author(s):

Kun-Wei Lin ◽

Chin-Chuan Cheng ◽

Shiou-Ying Cheng ◽

Kuo-Hui Yu ◽

Chih-Kai Wang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Hydrogen Sensor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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