Tunable 2.7-3.7 μm InAsSb(P)/InAsSbP low threshold diode lasers

Proceedings of IEEE 14th International Semiconductor Laser Conference ISLC-94 ◽

10.1109/islc.1994.519355 ◽

2002 ◽

Author(s):

Yu.P. Yakovlev ◽

A.N. Baranov ◽

A.N. Imenkov ◽

V.V. Sherstnev

Keyword(s):

Diode Lasers ◽

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Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers

Applied Physics Letters ◽

10.1063/1.116726 ◽

1996 ◽

Vol 68 (6) ◽

pp. 738-740 ◽

Author(s):

Z. Feit ◽

M. McDonald ◽

R. J. Woods ◽

V. Archambault ◽

P. Mak

Keyword(s):

Diode Lasers ◽

Buried Heterostructure ◽

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Low-threshold-current-density vertical-cavity surface-emitting AlGaAs/GaAs diode lasers

IEEE Photonics Technology Letters ◽

10.1109/68.36043 ◽

1989 ◽

Vol 1 (8) ◽

pp. 205-208 ◽

Author(s):

D. Botez ◽

L.M. Zinkiewicz ◽

T.J. Roth ◽

L.J. Mawst ◽

G. Peterson

Keyword(s):

Current Density ◽

Diode Lasers ◽

Threshold Current ◽

Threshold Current Density ◽

Cavity Surface ◽

Vertical Cavity Surface ◽

Low Threshold ◽

Vertical Cavity

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High‐power, very low threshold, GaInP/AlGaInP visible diode lasers

Applied Physics Letters ◽

10.1063/1.104845 ◽

1991 ◽

Vol 58 (22) ◽

pp. 2464-2466 ◽

Author(s):

H. B. Serreze ◽

Y. C. Chen ◽

R. G. Waters

Keyword(s):

Diode Lasers ◽

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Low-threshold al<inf>x</inf>Ga<inf>1-x</inf>As visible and IR-light-emitting diode lasers

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1970.1076488 ◽

1970 ◽

Vol 6 (6) ◽

pp. 278-284 ◽

Author(s):

H. Kressel ◽

H. Lockwood ◽

H. Nelson

Keyword(s):

Light Emitting Diode ◽

Diode Lasers ◽

Light Emitting ◽

Low Threshold ◽

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Low-threshold high-To constricted double heterojunction AlGaAs diode lasers

Electronics Letters ◽

10.1049/el:19800671 ◽

1980 ◽

Vol 16 (25-26) ◽

pp. 942 ◽

Author(s):

D. Botez ◽

J.C. Connolly

Keyword(s):

Diode Lasers ◽

Double Heterojunction ◽

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TP-B3 uniformly low-threshold diode lasers at 1.5-1.55 µm from VPE In1-xGaxAsyP1-ymaterial

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1980.20217 ◽

1980 ◽

Vol 27 (11) ◽

pp. 2191-2191 ◽

Author(s):

W.D. Johnston ◽

K.E. Strege

Keyword(s):

Diode Lasers ◽

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Optimal cavity design for low‐threshold‐current‐density operation of double‐heterojunction diode lasers

Applied Physics Letters ◽

10.1063/1.90908 ◽

1979 ◽

Vol 35 (1) ◽

pp. 57-60 ◽

Author(s):

Dan Botez

Keyword(s):

Current Density ◽

Diode Lasers ◽

Threshold Current ◽

Threshold Current Density ◽

Heterojunction Diode ◽

Double Heterojunction ◽

Cavity Design ◽

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Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.93476 ◽

1982 ◽

Vol 41 (3) ◽

pp. 228-230 ◽

Author(s):

R. D. Burnham ◽

D. R. Scifres ◽

W. Streifer

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

High Efficiency ◽

Diode Lasers ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold ◽

Metalorganic Chemical

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Low threshold buried heterostructure quantum well diode lasers by laser‐assisted disordering

Applied Physics Letters ◽

10.1063/1.97752 ◽

1987 ◽

Vol 50 (23) ◽

pp. 1637-1639 ◽

Author(s):

J. E. Epler ◽

R. D. Burnham ◽

R. L. Thornton ◽

T. L. Paoli

Keyword(s):

Quantum Well ◽

Diode Lasers ◽

Buried Heterostructure ◽

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2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

Applied Physics Letters ◽

10.1063/1.111603 ◽

1994 ◽

Vol 64 (19) ◽

pp. 2480-2482 ◽

Author(s):

A. N. Baranov ◽

A. N. Imenkov ◽

V. V. Sherstnev ◽

Yu. P. Yakovlev

Keyword(s):

Diode Lasers ◽

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