Monolithic dual-wavelength lasers for CD-R/DVD±RW/R/RW

2005 ◽  
Author(s):  
S. Agatsuma ◽  
N. Hoshi ◽  
K. Tanno ◽  
H. Iki ◽  
S. Yoshida ◽  
...  
Keyword(s):  
Dual Wavelength

Single/dual-wavelength switchable and tunable passively Q-switched erbium-doped fiber laser

2020 ◽  
Vol 111 ◽  
pp. 103519
Author(s):  
Shuangcheng Chen ◽  
Baole Lu ◽  
Zengrun Wen ◽  
Haowei Chen ◽  
Jintao Bai
Keyword(s):  
Fiber Laser ◽  
Dual Wavelength ◽  
Erbium Doped

Dual wavelength laser-induced damage threshold measurements of alumina/silica and hafnia/silica ultraviolet antireflective coatings

2015 ◽  
Vol 55 (1) ◽  
pp. 104 ◽  
Author(s):  
Marius Mrohs ◽  
Lars Jensen ◽  
Stefan Günster ◽  
Thimotheus Alig ◽  
Detlev Ristau
Keyword(s):  
Damage Threshold ◽  
Dual Wavelength ◽  
Antireflective Coatings ◽  
Dual Wavelength Laser ◽  
Laser Induced Damage

scholarly journals Vertical monolithic integration of wide- and narrow-bandgap semiconductor nanostructures on graphene films

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Youngbin Tchoe ◽  
Janghyun Jo ◽  
HoSung Kim ◽  
Heehun Kim ◽  
Hyeonjun Baek ◽  
...  
Keyword(s):  
Graphene Film ◽  
Monolithic Integration ◽  
Hybrid Nanostructures ◽  
Dual Wavelength ◽  
Multilayer Graphene ◽  
Graphene Films ◽  
Transmission Electron ◽  
Zno Nanotubes ◽  
Metal Organic ◽  
Hybrid Configuration

AbstractWe report monolithic integration of indium arsenide (InAs) nanorods and zinc oxide (ZnO) nanotubes using a multilayer graphene film as a suspended substrate, and the fabrication of dual-wavelength photodetectors with the hybrid configuration of these materials. For the hybrid nanostructures, ZnO nanotubes and InAs nanorods were grown vertically on the top and bottom surfaces of the graphene films by metal-organic vapor-phase epitaxy and molecular beam epitaxy, respectively. The structural, optical, and electrical characteristics of the hybrid nanostructures were investigated using transmission electron microscopy, spectral photoresponse analysis, and current–voltage measurements. Furthermore, the hybrid nanostructures were used to fabricate dual-wavelength photodetectors sensitive to both ultraviolet and mid-infrared wavelengths.

Self-started dual-wavelength mode-locking with well-controlled repetition rate difference

2021 ◽  
pp. 1-1
Author(s):  
Zhengru Guo ◽  
Tingting Liu ◽  
Junsong Peng ◽  
Yuanjun Zhu ◽  
Kun Huang ◽  
...  
Keyword(s):  
Repetition Rate ◽  
Mode Locking ◽  
Dual Wavelength ◽  
Rate Difference

scholarly journals Dual-wavelength pumped highly birefringent microstructured silica fiber for widely tunable soliton self-frequency shift

2021 ◽  
pp. 1-1
Author(s):  
Olga Szewczyk ◽  
Piotr Pala ◽  
Karol Lech Tarnowski ◽  
Jacek Olszewski ◽  
Chuang Lu ◽  
...  
Keyword(s):  
Frequency Shift ◽  
Dual Wavelength ◽  
Silica Fiber

In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1−xGex Heterostructures and Multiuantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef
Keyword(s):  
Growth Rate ◽  
Light Scattering ◽  
Laser Light ◽  
Growth Period ◽  
Laser Light Scattering ◽  
Heterojunction Bipolar Transistor ◽  
Dual Wavelength ◽  
Multi Quantum Well ◽  
Refractive Index Data

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.

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