Properties of Hf0.7Zr0.3O2 thin films chemical vapor deposited using a single-source precursor of anhydrous HfxZr1−x(NO34 precursors

2010 ◽  
Author(s):  
Wenqi Zhang ◽  
Liuying Huang ◽  
Aidong Li ◽  
Qiyue Shao ◽  
Di Wu
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Single Source ◽  
Chemical Vapor Deposited ◽  
Single Source Precursor

Hafnium diboride thin films by chemical vapor deposition from a single source precursor

2005 ◽  
Vol 23 (6) ◽  
pp. 1619-1625 ◽  
Author(s):  
Sreenivas Jayaraman ◽  
Yu Yang ◽  
Do Young Kim ◽  
Gregory S. Girolami ◽  
John R. Abelson
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
Hafnium Diboride ◽  
Single Source Precursor

scholarly journals Accessing new 2D semiconductors with optical band gap: synthesis of iron-intercalated titanium diselenide thin films via LPCVD

RSC Advances ◽  
2018 ◽  
Vol 8 (40) ◽  
pp. 22552-22558 ◽  
Author(s):  
Clara Sanchez-Perez ◽  
Caroline E. Knapp ◽  
Ross H. Colman ◽  
Carlos Sotelo-Vazquez ◽  
Raija Oilunkaniemi ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Single Source ◽  
2D Semiconductors ◽  
Single Source Precursor ◽  
Pressure Chemical

Fe-doped TiSe2 thin-films were synthesized via low pressure chemical vapor deposition (LPCVD) of a single source precursor: [Fe(η5-C5H4Se)2Ti(η5-C5H5)2]2 (1).

Growth of ternary Si1−x-yGexCy thin films from a single-source precursor, Ge(SiMe3)4

1995 ◽  
Vol 10 (9) ◽  
pp. 2257-2259 ◽  
Author(s):  
Hsin-Tien Chiu ◽  
Ching-Shing Shie ◽  
Shiow-Huey Chuang
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Binding Energies ◽  
Photoelectron Spectra ◽  
Cubic Phase ◽  
Single Source ◽  
Wavelength Dispersive Spectroscopy ◽  
X Ray ◽  
Single Source Precursor ◽  
Pressure Chemical

Ge(SiMe3)4 was used as a single-source precursor to deposit thin films of alloys of germanium, silicon, and carbon, Si1−x-yGexCy, by low-pressure chemical vapor deposition on silicon substrates at temperatures 873-973 K. X-ray diffraction studies indicated that the films grown above 898 K were cubic phase (a = 0.441–0.442 nm). Infrared spectra of the films showed a major absorption near 783 cm−1. X-ray photoelectron spectra of a typical thin film showed binding energies of Ge3d, Si2p, and C1s electrons at 30.0, 100.6, and 283.2 eV, respectively. As determined by wavelength dispersive spectroscopy, x was 0.07–0.15 and y was 0.43–0.50, indicating that the films contained 7–15% Ge, 38–43% Si, and 43–50% C. At 973 K, the C/(Si + Ge) ratio was 1. Based on these data, the films deposited above 898 K have a structure of β-SiC with Ge atoms replacing some Si atoms in the lattice.

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