Simulation of self-heating effects on heterojunction bipolar transistors

2013 ◽  
Author(s):  
Yang-Hua Chang ◽  
Jia-Shiou Cai
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Self Heating ◽  
Heating Effects

Failure Model Research of Power HBTs

2014 ◽  
Vol 926-930 ◽  
pp. 1348-1351
Author(s):  
Jing Wei Yang ◽  
Meng Meng Xu
Keyword(s):  
Thermal Stress ◽  
Heterojunction Bipolar Transistors ◽  
Microwave Power ◽  
Power Dissipation ◽  
Bipolar Transistors ◽  
Failure Model ◽  
Experiment System ◽  
Base Current ◽  
Model Research ◽  
Heating Effects

Heterojunction bipolar transistors (HBTs) are playing an important role in microwave and power applications. When HBTs operated at high power, the power dissipation and self-heating effects will enable the generation of electrical properties in the transistor failure. The failure experiment system of microwave power HBTs was established. Based on this system, the changes of electrical parameters of HBTs in deferent stress, such as Gummel plots, base current various different base-emitter voltage and base-collector voltage, were measured and analyzed. At the same time, the failure of base current of SiGe HBTs under the condition of FC, SC and thermal stress are studied respectively. It was found that ΔIBis the sensitive parameter of electrical and thermal stress. Based on this reason, we presented the failure model of IB. This model could explain the experiment phenomenon successfully, which is very important and useful for applications of microwave power analog IC’s.

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