The JFET as a photosensitive cell in image sensor arrays

Author(s):  
J. Lohstroh
Nano Today ◽  
2022 ◽  
Vol 42 ◽  
pp. 101366
Author(s):  
Wenchao Gao ◽  
Zhangsheng Xu ◽  
Xun Han ◽  
Caofeng Pan

2010 ◽  
Vol 2010 (1) ◽  
pp. 000015-000022
Author(s):  
Paul Enquist

3D microelectronics integration and wafer scale packaging promise improvements in functional density and cost compared to conventional 2D microelectronics and packaging technologies. The realization of these improvements will require further adoption of 3D volume manufacturing process technologies. These process technologies will likely include through silicon via (TSV) and die or wafer bonding with and without 3D interconnect. Low temperature direct bond technologies have a number of inherent performance and cost advantages compared to other bonding technologies. This paper describes low temperature direct oxide bond technologies with and without a scalable 3D interconnect developed by Ziptronix and cost savings, performance and applications that will be enabled by adoption of these technologies. Enabled cost savings and performance include system or network-on-chip, system in package, and TSVs. Enabled applications include backside illuminated image sensors, micron-scale pitch vertically integrated image sensor arrays, 3D system-on-chip and 3D network-on-chip.


2020 ◽  
Vol 7 (7) ◽  
pp. 1901-1911 ◽  
Author(s):  
Aobo Ren ◽  
Jihua Zou ◽  
Huagui Lai ◽  
Yixuan Huang ◽  
Liming Yuan ◽  
...  

Solution-processed MXene–perovskite image sensor arrays are realized by a top-down method, which combine desirable manufacturing advantages and state-of-the-art performance metrics.


1997 ◽  
Vol 44 (10) ◽  
pp. 1699-1705 ◽  
Author(s):  
M. Schanz ◽  
W. Brockherde ◽  
R. Hauschild ◽  
B.J. Hosticka ◽  
M. Schwarz

1968 ◽  
Vol 15 (4) ◽  
pp. 215-219 ◽  
Author(s):  
G. Sadasiv ◽  
P.K. Weimer ◽  
W.S. Pike
Keyword(s):  

2000 ◽  
Vol 29 (5) ◽  
pp. 303-306
Author(s):  
V. A. Arutyunov ◽  
O. V. Sorokin

1996 ◽  
Vol 198-200 ◽  
pp. 1151-1154 ◽  
Author(s):  
R.A. Street ◽  
X.D. Wu ◽  
R. Weisfield ◽  
S. Ready ◽  
R. Apte ◽  
...  

1993 ◽  
Vol 297 ◽  
Author(s):  
C Van Berkel ◽  
N C Bird ◽  
C J Curling ◽  
I D French

2D image sensor arrays made with a-Si devices on glass over large area are of considerable interest as document scanners and in medical applications. We have made a test array containing a-Si NIP diodes for both the sensors and the active matrix switching devices. The issues of vertical crosstalk and image lag are discussed in relation to the device performance of the switching diode. The vertical crosstalk is controlled by the diode capacitance and the image lag by the high transient current in the device. We speculate that the transient current is a trap filling current in the deep states of the switching diode.


2007 ◽  
Vol 989 ◽  
Author(s):  
William S. Wong ◽  
TseNga Ng ◽  
Michael L. Chabinyc ◽  
Rene A. Lujan ◽  
Raj B. Apte ◽  
...  

AbstractAmorphous silicon-based x-ray image sensor arrays were fabricated on poly-ethylene naphthalate substrates at process temperatures below 180°C. Patterning of the thin-film transistor backplane was accomplished using ink-jet printed etch masks. The sensor devices were found to be comparable to high-temperature processed devices. The integration of the sensor stack, TFT array and PEN substrate resulted in a flexible x-ray image sensor with 180×180 pixels with 75 dpi resolution.


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