trap filling
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2020 ◽  
Vol 4 (8) ◽  
Author(s):  
N. Ganesh ◽  
Anaranya Ghorai ◽  
Shrreya Krishnamurthy ◽  
Suman Banerjee ◽  
K. L. Narasimhan ◽  
...  

2020 ◽  
Vol 8 ◽  
Author(s):  
Mingguang Li ◽  
Jing Li ◽  
Longsheng Yu ◽  
Ying Zhang ◽  
Yizhong Dai ◽  
...  

2020 ◽  
Vol 116 (11) ◽  
pp. 112101 ◽  
Author(s):  
Shuhei Saitoh ◽  
Kentaro Kinoshita

2020 ◽  
Vol 8 (21) ◽  
pp. 6988-6992 ◽  
Author(s):  
Qingqing Gao ◽  
Chenlin Li ◽  
Yichun Liu ◽  
Jiahua Zhang ◽  
Xiao-jun Wang ◽  
...  

Developing a conceptual “write”/“read” technology for optical information storage of persistent phosphors is necessary but often underestimated.


2020 ◽  
Vol 22 (13) ◽  
pp. 7100-7109 ◽  
Author(s):  
Ke Pei ◽  
Albert Ho Yuen Lau ◽  
Paddy Kwok Leung Chan

Performance improvement of large bandgap organic semiconductor transistors by surface-doping through a trap filling process.


2019 ◽  
Vol 9 (3) ◽  
pp. 434
Author(s):  
Xin Jin ◽  
Hai Wang ◽  
Caixin Feng

In this work, we report the nonlinear carriers’ transport in n-doped monocrystalline silicone with millimeter-scale length. Ohm, effective trap filling, and Mott–Gurney regimes are distinguished from the current–voltage (I–V) curve. Two critical voltages are identified for the lower and upper limitations of an effective trap-filling regime. Meanwhile, the electrode spacing, temperature, and magnetic field dependence of the two critical voltages are demonstrated experimentally. In particular, we propose that the effective trap-filling process is irreversible under electric field. It is observed that the hysteresis of I–V curve initiates from the effective trap-filling regime and extends to the Mott–Gurney regime, forming the resistance-switching loop. In addition, the temperature dependence and the magnetic field dependence of the resistance-switching loop are reported. The above observations may shed light on dopants engineering on carrier dynamics in a space charge regime and further advance resistance-switching devices technology.


Nanoscale ◽  
2019 ◽  
Vol 11 (7) ◽  
pp. 3360-3369 ◽  
Author(s):  
Zhen Hong ◽  
Jie Zhao ◽  
Shujun Li ◽  
Baochang Cheng ◽  
Yanhe Xiao ◽  
...  

For a single CH3NH3PbI3 micro/nanowire-based two-terminal structure, its hysteresis properties with nonvolatile memory can be accurately modulated by illuminating different sites, and its origin can be clearly identified as the variation of surface barrier related to trap filling.


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