Flexible a-Si:H-based Image Sensors Fabricated by Digital Lithography

AbstractAmorphous silicon-based x-ray image sensor arrays were fabricated on poly-ethylene naphthalate substrates at process temperatures below 180°C. Patterning of the thin-film transistor backplane was accomplished using ink-jet printed etch masks. The sensor devices were found to be comparable to high-temperature processed devices. The integration of the sensor stack, TFT array and PEN substrate resulted in a flexible x-ray image sensor with 180×180 pixels with 75 dpi resolution.

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Flexible, active-matrix flat-panel image sensor for low dose X-ray detection enabled by integration of perovskite photodiode and oxide thin film transistor

2019 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm19573.2019.8993639 ◽

2019 ◽

Author(s):

Taoyu Zou ◽

Changdong Chen ◽

Ben Xiang ◽

Ya Wang ◽

Chuan Liu ◽

...

Keyword(s):

Thin Film ◽

Low Dose ◽

Thin Film Transistor ◽

Image Sensor ◽

Oxide Thin Film ◽

Flat Panel ◽

Active Matrix ◽

X Ray

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Color-Filter-Free Three-Layer-Stacked Image Sensor Using Blue/Green-Selective Organic Photoconductive Films with Thin-Film Transistor Circuits on CMOS Image Sensors

ACS Applied Electronic Materials ◽

10.1021/acsaelm.1c00310 ◽

2021 ◽

Author(s):

Toshikatsu Sakai ◽

Tomomi Takagi ◽

Koki Imamura ◽

Keitada Mineo ◽

Hidenori Yakushiji ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Image Sensor ◽

Image Sensors ◽

Color Filter ◽

Cmos Image Sensors ◽

Transistor Circuits

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Amorphous Silicon Photodiode-Thin Film Transistor Image Sensor with Diode on Top Structure

MRS Proceedings ◽

10.1557/proc-467-863 ◽

1997 ◽

Vol 467 ◽

Cited By ~ 13

Author(s):

M J Powell ◽

C Glasse ◽

I D French ◽

A R Franklin ◽

J R Hughes ◽

...

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistor ◽

Image Sensor ◽

Sensor Technology ◽

Noise Performance ◽

Silicon Thin Film ◽

Silicon Photodiode ◽

Insulating Layer ◽

X Ray

ABSTRACTWe have developed a new amorphous silicon image sensor technology using a matrix array of amorphous silicon thin film transistors and photodiodes, where the amorphous silicon nip photodiode is fabricated on top of a thick insulating layer, on top of the thin film transistor array. We call this ‘diode on top’ technology or DOTTY. The active diode area can be as high as 93%, compared to 50% for our conventional photodiode-TFT technology. This leads to a higher signal to noise performance, which is important for medical X-ray applications.

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Dual-Gate Photosensitive Thin-Film Transistor-Based Active Pixel Sensor for Indirect-Conversion X-Ray Imaging

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2457449 ◽

2015 ◽

Vol 62 (9) ◽

pp. 2894-2899 ◽

Cited By ~ 18

Author(s):

Kai Wang ◽

Hai Ou ◽

Jun Chen

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Active Pixel Sensor ◽

X Ray ◽

X Ray Imaging ◽

Active Pixel ◽

Dual Gate

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Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation

RSC Advances ◽

10.1039/c9ra03053k ◽

2019 ◽

Vol 9 (36) ◽

pp. 20865-20870 ◽

Cited By ~ 2

Author(s):

Dong-Gyu Kim ◽

Jong-Un Kim ◽

Jun-Sun Lee ◽

Kwon-Shik Park ◽

Youn-Gyoung Chang ◽

...

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Hydrogen Incorporation ◽

X Ray ◽

Spectroscopic Analyses ◽

Bottom Gate ◽

Igzo Tft

We studied the effect of X-ray irradiation on the negative threshold voltage shift of bottom-gate a-IGZO TFT. Based on spectroscopic analyses, we found that this behavior was caused by hydrogen incorporation and oxygen vacancy ionization.

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