scholarly journals Robust digital design in organic electronics by dual-gate technology

Author(s):  
Kris Myny ◽  
Monique J. Beenhakkers ◽  
Nick A. J. M. van Aerle ◽  
Gerwin H. Gelinck ◽  
Jan Genoe ◽  
...  
2014 ◽  
Vol 54 (1) ◽  
pp. 100-109 ◽  
Author(s):  
Brijesh Kumar ◽  
Brajesh Kumar Kaushik ◽  
Yuvraj Singh Negi ◽  
Vidhi Goswami
Keyword(s):  

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset

2008 ◽  
Author(s):  
Jun Takeya ◽  
Takafumi Uemura ◽  
M. Uno ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari

Author(s):  
Thu Trang Do ◽  
Hong Duc Pham ◽  
Yasunori Takeda ◽  
Sergei Manzhos ◽  
John Bell ◽  
...  

Author(s):  
Kai Wang ◽  
Rhys Weaver ◽  
David Johnson

Abstract A systemic analysis was chosen to evaluate a real case Bluetooth (BT) radio failure in the aspects of RF communication, digital design, firmware, application software, semiconductor device physics and processing, and failure analysis. This paper explores the range of testing, including customer application testing, required to confirm and localize a BT RF communication failure. It shows that the radio communication failure was not, as expected, caused by faulty radio hardware; it was rather linked to problematic encryption hardware at the assistance of the Synergy BT to mobile application. The paper also explores that the digital fault can only be detected by the timing sensitive transition fault scan patterns and how to obtain the physical failure location. Thus, the combination of ATPG and application testing provides a consistency between electrical diagnostics which yields a higher success rate at subsequent physical failure analysis of complex modern RF System on a Chip.


Author(s):  
Cheng-Piao Lin ◽  
Chin-Hsin Tang ◽  
Cheng-Hsu Wu ◽  
Cheng-Chun Ting

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.


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