Coding Schemes for Crossbar Resistive Memory with High Line Resistance in SCM Applications

Author(s):  
Zehui Chen ◽  
Lara Dolecek
2021 ◽  
Vol 11 (1) ◽  
pp. 9
Author(s):  
Fernando Leonel Aguirre ◽  
Nicolás M. Gomez ◽  
Sebastián Matías Pazos ◽  
Félix Palumbo ◽  
Jordi Suñé ◽  
...  

In this paper, we extend the application of the Quasi-Static Memdiode model to the realistic SPICE simulation of memristor-based single (SLPs) and multilayer perceptrons (MLPs) intended for large dataset pattern recognition. By considering ex-situ training and the classification of the hand-written characters of the MNIST database, we evaluate the degradation of the inference accuracy due to the interconnection resistances for MLPs involving up to three hidden neural layers. Two approaches to reduce the impact of the line resistance are considered and implemented in our simulations, they are the inclusion of an iterative calibration algorithm and the partitioning of the synaptic layers into smaller blocks. The obtained results indicate that MLPs are more sensitive to the line resistance effect than SLPs and that partitioning is the most effective way to minimize the impact of high line resistance values.


2020 ◽  
Vol 8 (38) ◽  
pp. 13368-13374
Author(s):  
Muhammad Umair Khan ◽  
Gul Hassan ◽  
Jinho Bae

This paper proposes a novel soft ionic liquid (IL) electrically functional device that displays resistive memory characteristics using poly(acrylic acid) partial sodium salt (PAA-Na+:H2O) solution gel and sodium hydroxide (NaOH) in a thin polydimethylsiloxane (PDMS) cylindrical microchannel.


2013 ◽  
Vol 8 (2) ◽  
pp. 26-31
Author(s):  
R. M. J. Priya ◽  
◽  
S Gayathri ◽  
C. Lakshmipriya ◽  
M. Arunkumar ◽  
...  

Author(s):  
Mais Sami Ali ◽  
Abdulkareem Abdulrahman Kadhim

1995 ◽  
Vol 31 (5) ◽  
pp. 341-342 ◽  
Author(s):  
F.H. Ali ◽  
S.A.G. Chandler ◽  
S. Soysa

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