Diffusion-less ultra-shallow p+/n junction formation in Si using low-temperature solid phase epitaxy and non-melt laser annealing

2009 ◽  
Author(s):  
R. Kaneko ◽  
S. Hara ◽  
T. Fukaya ◽  
S. Matsumoto ◽  
T. Suzuki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Annealing ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Junction Formation

Formation of Ultra Shallow p+/n Junction in Silicon Using a Combination of Low-Temperature Solid Phase Epitaxy and Non-Melt Double-Pulsed Green Laser Annealing

2013 ◽  
Vol 52 (2R) ◽  
pp. 026501 ◽  
Author(s):  
Siti Rahmah Aid ◽  
Shuhei Hara ◽  
Yusuke Shigenaga ◽  
Takumi Fukaya ◽  
Yuki Tanaka ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Annealing ◽  
Solid Phase ◽  
Green Laser ◽  
Solid Phase Epitaxy

Ultra-Shallow P[sup +]∕N Junction Formation in Si Using Low Temperature Solid Phase Epitaxy Assisted with Laser Activation

2008 ◽  
Author(s):  
Shuhei Hara ◽  
Yuki Tanaka ◽  
Takumi Fukaya ◽  
Satoru Matsumoto ◽  
Toshiharu Suzuki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Junction Formation

Reduction of Interface Reactions in the Low-Temperature Solid-Phase Epitaxy of ScAlMgO4 on Al2O3(0001)

2020 ◽  
Vol 20 (9) ◽  
pp. 6001-6007
Author(s):  
Yajin Chen ◽  
Peng Zuo ◽  
Yingxin Guan ◽  
M. Humed Yusuf ◽  
Susan E. Babcock ◽  
...  
Keyword(s):  
Low Temperature ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Interface Reactions

Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors

1996 ◽  
Vol 53 (8) ◽  
pp. 4757-4769 ◽  
Author(s):  
G. Vitali ◽  
L. Palumbo ◽  
M. Rossi ◽  
G. Zollo ◽  
C. Pizzuto ◽  
...  
Keyword(s):  
Low Power ◽  
Laser Annealing ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Compound Semiconductors ◽  
Solid Phase Epitaxy ◽  
Pulsed Laser Annealing
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