Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing instructions for

AbstractThin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

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Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors

Physical Review B ◽

10.1103/physrevb.53.4757 ◽

1996 ◽

Vol 53 (8) ◽

pp. 4757-4769 ◽

Cited By ~ 18

Author(s):

G. Vitali ◽

L. Palumbo ◽

M. Rossi ◽

G. Zollo ◽

C. Pizzuto ◽

...

Keyword(s):

Low Power ◽

Laser Annealing ◽

Solid Phase ◽

Pulsed Laser ◽

Compound Semiconductors ◽

Solid Phase Epitaxy ◽

Pulsed Laser Annealing

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Diffusion-less ultra-shallow p+/n junction formation in Si using low-temperature solid phase epitaxy and non-melt laser annealing

2009 International Workshop on Junction Technology ◽

10.1109/iwjt.2009.5166233 ◽

2009 ◽

Author(s):

R. Kaneko ◽

S. Hara ◽

T. Fukaya ◽

S. Matsumoto ◽

T. Suzuki ◽

...

Keyword(s):

Low Temperature ◽

Laser Annealing ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Junction Formation

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Solid phase epitaxy and characterization of FeSi2 layers on Si(111)

Applied Surface Science ◽

10.1016/0169-4332(92)90268-3 ◽

1992 ◽

Vol 56-58 ◽

pp. 444-448 ◽

Cited By ~ 12

Author(s):

F. Scarinci ◽

S. Lagomarsino ◽

C. Giannini ◽

G. Savelli ◽

P. Castrucci ◽

...

Keyword(s):

Solid Phase ◽

Solid Phase Epitaxy

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Surfactant enhanced solid phase epitaxy of Ge/CaF2/Si(111): Synchrotron x-ray characterization of structure and morphology

Journal of Applied Physics ◽

10.1063/1.3661174 ◽

2011 ◽

Vol 110 (10) ◽

pp. 102205 ◽

Cited By ~ 2

Author(s):

J. Wollschläger ◽

C. Deiter ◽

C. R. Wang ◽

B. H. Müller ◽

K. R. Hofmann

Keyword(s):

Solid Phase ◽

Solid Phase Epitaxy ◽

X Ray ◽

Structure And Morphology

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Si:C-S/D Engineering using Cascade C7Hx Implantation Followed by Rapid Solid-Phase Epitaxy and Laser Annealing for nMOSFET with Highly-Strained and Low-Resistive S/D

10.7567/ssdm.2013.b-1-3 ◽

2013 ◽

Author(s):

T. Yamaguchi ◽

Y. Kawasaki ◽

T. Yamashita ◽

Y. Nishida ◽

M. Mizuo ◽

...

Keyword(s):

Laser Annealing ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Highly Strained

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Formation of Ultra Shallow p+/n Junction in Silicon Using a Combination of Low-Temperature Solid Phase Epitaxy and Non-Melt Double-Pulsed Green Laser Annealing

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.026501 ◽

2013 ◽

Vol 52 (2R) ◽

pp. 026501 ◽

Cited By ~ 4

Author(s):

Siti Rahmah Aid ◽

Shuhei Hara ◽

Yusuke Shigenaga ◽

Takumi Fukaya ◽

Yuki Tanaka ◽

...

Keyword(s):

Low Temperature ◽

Laser Annealing ◽

Solid Phase ◽

Green Laser ◽

Solid Phase Epitaxy

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Solid Phase Epitaxy of Si1-xGex on Si Strained Layers

MRS Proceedings ◽

10.1557/proc-160-353 ◽

1989 ◽

Vol 160 ◽

Cited By ~ 1

Author(s):

B.J. Robinson ◽

B.T. Chilton ◽

P. Ferret ◽

D.A. Thompson

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Solid Phase ◽

Strain Relaxation ◽

Crystal Quality ◽

Solid Phase Epitaxy ◽

Strained Layers ◽

Transmission Electron ◽

Layer Structures

AbstractSingle strained layer structures of up to 30 nm of Si1-xGex. on (100) Si and capped with 30-36 nm of Si have been amorphized by implantation with 120 keV As . The amorphized region, extending to a depth of 130 nm, has been regrown by solid phase epitaxy (SPE) at 600°C. Characterization of the regrown structure by Rutherford backscattering/channeling techniques and transmission electron microscopy indicates that for x < 0.18 the SPE process results in the recovery of strain, while for x > 0.18 there is increasing strain relaxation and a deterioration of crystal quality.

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