Impact of growth parameters on the structural properties of InP/GaAs type-II quantum dots grown by metal-organic vapour phase epitaxy

2007 ◽  
Author(s):  
S. D. Singh ◽  
T. K. Sharma ◽  
C. Mukherjee ◽  
S. M. Oak
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Growth Parameters ◽  
Vapour Phase ◽  
Type Ii ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

Morphology and photoelectronic properties of InAs/GaAs surface quantum dots grown by metal-organic vapour-phase epitaxy

2001 ◽  
Vol 12 (4) ◽  
pp. 425-429 ◽  
Author(s):  
I A Karpovich ◽  
N V Baidus ◽  
B N Zvonkov ◽  
S V Morozov ◽  
D O Filatov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vapour Phase ◽  
Gaas Surface ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Shape of indium nitride quantum dots and nanostructures grown by metal organic vapour phase epitaxy

2009 ◽  
Vol 6 (S2) ◽  
pp. S574-S577 ◽  
Author(s):  
Simon Ploch ◽  
Christian Meissner ◽  
Markus Pristovsek ◽  
Michael Kneissl
Keyword(s):  
Quantum Dots ◽  
Indium Nitride ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

scholarly journals Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

APL Materials ◽  
2014 ◽  
Vol 2 (12) ◽  
pp. 126101 ◽  
Author(s):  
J. T. Griffiths ◽  
T. Zhu ◽  
F. Oehler ◽  
R. M. Emery ◽  
W. Y. Fu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Temperature Method ◽  
Metal Organic ◽  
Organic Vapour ◽  
Two Temperature

scholarly journals Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy

2015 ◽  
Vol 88 ◽  
pp. 480-488 ◽  
Author(s):  
Tongtong Zhu ◽  
James T. Griffiths ◽  
Wai Yuen Fu ◽  
Ashley Howkins ◽  
Ian W. Boyd ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vapour Phase ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Growth efficiency and distribution coefficient of GaInP–InP epilayers and heterostructures

1992 ◽  
Vol 70 (10-11) ◽  
pp. 783-788 ◽  
Author(s):  
A. Bensaada ◽  
R. W. Cochrane ◽  
R. A. Masut
Keyword(s):  
Distribution Coefficient ◽  
Growth Process ◽  
Growth Parameters ◽  
Structural Data ◽  
Growth Efficiency ◽  
Vapour Phase ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

We have prepared GaInP epilayers on InP by low pressure metal-organic vapour-phase epitaxy to explore the structural, electrical, and optical properties of this relatively little-studied combination. In this paper, we focus on the growth process of GaInP by examining both single thick epilayers on InP as well as a number of double barriers of GaInP–InP prepared from two different trimethylindium (TMIn) sources. High-resolution X-ray diffraction (HRXRD) has been used to extract layer compositions and thicknesses and. consequently, the growth rates and efficiencies of the binary and ternary layers. In general, HRXRD indicates completely constrained heterostructures of high quality. Combining the growth parameters with the structural data leads to the determination of the Ga distribution coefficient during growth of the ternary compound that is found to depend strongly on the quality and stability of the TMIn source. Results from two series of epilayer depositions using the two TMIn sources are presented to illustrate the strong connection between the quality of the source material and the growth process of the epilayers.

Self-Organized Sb-Based Quantum Dots Studied by Means of AFM, TEM and PL

2000 ◽  
Vol 6 (S2) ◽  
pp. 1102-1103
Author(s):  
P. Möck ◽  
G.R. Booker ◽  
E. Alphandery ◽  
N.J. Mason ◽  
R.J. Nicholas
Keyword(s):  
Quantum Dots ◽  
Vapour Phase ◽  
Infrared Region ◽  
Electromagnetic Spectrum ◽  
Vapour Phase Epitaxy ◽  
Self Organized ◽  
Metal Organic ◽  
Organic Vapour ◽  
Middle Infrared ◽  
Potential Use

There is currently an increasing interest in the growth and characterisation of semiconductor quantum dots (QDs) for potential use in opto-electronic devices. Heteroepitaxy in the Stranski-Krastanow growth mode is thought to be one of the most promising routes towards the fabrication of such QDs. Little work has been done so far to extend the range of wavelength at which potential QD based opto-electronic devises might work into the middle infrared region of the electromagnetic spectrum. The aim of this paper is to expand on our previous reports on such work and to present new experimental observations concerning the formation of InSb rich QDs in GaSb and InAs matrices. Preliminary results on GaSb rich islands on GaAs are also given for comparison purposes. All samples were grown by metal-organic vapour phase epitaxy on nominal (001) GaAs and GaSb substrates at susceptor temperatures ranging from 460 to 545 °C.

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