Growth efficiency and distribution coefficient of GaInP–InP epilayers and heterostructures

1992 ◽  
Vol 70 (10-11) ◽  
pp. 783-788 ◽  
Author(s):  
A. Bensaada ◽  
R. W. Cochrane ◽  
R. A. Masut
Keyword(s):  
Distribution Coefficient ◽  
Growth Process ◽  
Growth Parameters ◽  
Structural Data ◽  
Growth Efficiency ◽  
Vapour Phase ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

We have prepared GaInP epilayers on InP by low pressure metal-organic vapour-phase epitaxy to explore the structural, electrical, and optical properties of this relatively little-studied combination. In this paper, we focus on the growth process of GaInP by examining both single thick epilayers on InP as well as a number of double barriers of GaInP–InP prepared from two different trimethylindium (TMIn) sources. High-resolution X-ray diffraction (HRXRD) has been used to extract layer compositions and thicknesses and. consequently, the growth rates and efficiencies of the binary and ternary layers. In general, HRXRD indicates completely constrained heterostructures of high quality. Combining the growth parameters with the structural data leads to the determination of the Ga distribution coefficient during growth of the ternary compound that is found to depend strongly on the quality and stability of the TMIn source. Results from two series of epilayer depositions using the two TMIn sources are presented to illustrate the strong connection between the quality of the source material and the growth process of the epilayers.

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

scholarly journals Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Duc V. Dinh ◽  
Nan Hu ◽  
Yoshio Honda ◽  
Hiroshi Amano ◽  
Markus Pristovsek
Keyword(s):  
Room Temperature ◽  
Optical Emission ◽  
Vapour Phase ◽  
Optical Data ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Metal Organic ◽  
Organic Vapour

Abstract Growth of AlxGa1−xN layers (0 ≤ x ≤ 1) simultaneously on polar (0001), semipolar ($$10\bar{{\rm{1}}}$$ 10 1 ¯ 3) and ($$11\bar{{\rm{2}}}2$$ 11 2 ¯ 2 ), as well as nonpolar ($$10\bar{{\rm{1}}}0$$ 10 1 ¯ 0 ) and ($$11\bar{{\rm{2}}}0$$ 11 2 ¯ 0 ) AlN templates, which were grown on planar sapphire substrates, has been investigated by metal-organic vapour phase epitaxy. By taking into account anisotropic in-plane strain of semi- and non-polar layers, their aluminium incorporation has been determined by x-ray diffraction analysis. Optical emission energy of the layers was obtained from room-temperature photoluminescence spectra, and their effective bandgap energy was estimated from room-temperature pseudo-dielectric functions. Both x-ray diffraction and optical data consistently show that aluminium incorporation is comparable on the polar, semi- and non-polar planes.

Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications

2008 ◽  
Vol 16 (1) ◽  
pp. 1-7 ◽  
Author(s):  
B. Ściana ◽  
I. Zborowska-Lindert ◽  
D. Pucicki ◽  
B. Boratyński ◽  
D. Radziewicz ◽  
...  
Keyword(s):  
Spectral Response ◽  
Active Regions ◽  
Vapour Phase ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Metal Organic ◽  
Organic Vapour ◽  
Main Detector

AbstractThe nitrogen-containing conventional AIIIBV semiconductor alloys, so-called diluted nitrides (AIIIBV-N), have been extensively studied recently. Unusual properties of these materials make them very promising for applications in lasers and very efficient multijunction solar cells. This work presents the technology and properties of undoped GaAs1-xNx/GaAs heterostructures used as active regions in the construction of metal-semiconductor-metal (MSM) photodetectors. The atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) was applied for growing MSM test structures. Their structural and optical properties were examined using high resolution X-ray diffraction (HRXRD), photoluminescence (PL), and photoreflectance spectroscopy (PR). Chemical wet etching was applied for forming an active region and a multifinger Schottky metallization was used as MSM contacts. Dark and illuminated current-voltage characteristics were measured. Based on the obtained results, the main detector parameters as responsivity and spectral response were estimated

X-ray diffraction evidence for transient composition effects in MOVPE multilayer growth for Ga1−x Al x As alloys

1987 ◽  
Vol 20 (3) ◽  
pp. 230-234 ◽  
Author(s):  
S. Bensoussan ◽  
C. Malgrange ◽  
M. Sauvage-Simkin ◽  
K. N'Guessan ◽  
P. Gibart
Keyword(s):  
Vapour Phase ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
Rocking Curve ◽  
X Ray ◽  
Layer Stacking ◽  
Metal Organic ◽  
Organic Vapour ◽  
Ray Methods

X-ray rocking-curve analysis is applied to the detection of artifacts in multilayer epitactic growth of III–V ternary compounds by metal–organic vapour-phase epitaxy (MOVPE). Transient spikes in the composition result in unwanted additional thin layers whose presence disturbs the interference pattern expected from the designed heterostructures, thus modifying the oscillating part of the reflection profile. X-ray methods and secondary-ion mass spectroscopy (SIMS) lead to descriptions of the actual layer stacking in good agreement with each other.

ZnSe metal organic vapour-phase epitaxy on GaAs: substrate preparation as the limiting factor in ZnSe growth

1998 ◽  
Vol 184-185 ◽  
pp. 1338 ◽  
Author(s):  
D.N. Gnoth ◽  
T.L. Ng ◽  
I.B. Poole ◽  
D.A. Evans ◽  
N. Maung ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Vapour Phase ◽  
Limiting Factor ◽  
Substrate Preparation ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

EXCITON AND BIEXCITON PHENOMENA IN ZINC SULPHIDE EPILAYERS

1996 ◽  
Vol 05 (04) ◽  
pp. 621-629 ◽  
Author(s):  
J. VALENTA ◽  
D. GUENNANI ◽  
A. MANAR ◽  
P. GILLIOT
Keyword(s):  
Optical Gain ◽  
Vapour Phase ◽  
Zinc Sulphide ◽  
Detailed Characterization ◽  
Vapour Phase Epitaxy ◽  
Nanosecond Lasers ◽  
Metal Organic ◽  
Organic Vapour ◽  
Linear Optical Properties

The detailed characterization of metal organic vapour phase epitaxy grown ZnS layers on GaAs is the first step towards the study of their different non-linear optical properties performed with nanosecond lasers. Biexciton phenomena (with a binding energy of about 10 meV) are observed in photoluminescence-excitation and optical-gain spectra.

Auto-épitaxie et propriétés d'As–Ga obtenu par épitaxie en phase vapeur à partir de composés organo-métalliques

1985 ◽  
Vol 63 (6) ◽  
pp. 732-735 ◽  
Author(s):  
M. Benzaquen ◽  
D. Walsh ◽  
J. Auclair
Keyword(s):  
Vapour Phase ◽  
Free Carrier ◽  
Variable Range Hopping ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Phase Vapeur ◽  
Extended States ◽  
Good Uniformity ◽  
Donor States

Lightly compensated epitactic n-type GaAs is obtained by metal-organic vapour-phase epitaxy (MOVPE) with free-carrier concentration in the low 1015 cm−3 range and with good uniformity of both thickness and impurity concentrations over a 2-in.-diameter area (1 in. = 2.54 cm). Detailed Hall-effect and photoluminescence measurements are reported. At temperatures below 8 K, the conductivity is governed by variable-range hopping, clearly indicating a band of localized donor states. At higher impurity concentrations, a metallic contribution to the conductivity suggests a buildup of extended states near the middle of this band. These results are consistent with the observed photoluminescence.

Sign in / Sign up

Export Citation Format

Share Document