Maskless patterning techniques are increasingly implemented in semiconductor research and manufacturing eliminating the need for costly masks or masters. Recent application of these techniques to DNA and cell patterning demonstrates the adaptability of maskless processes. In this paper we present a new lithographic process for dynamically reconfiguring and arbitrarily positioning computer-generated patterns through the use of phase holograms. Similar to current maskless patterning methods this process can achieve pattern transfer through serially tracing an image onto a substrate. The novelty of our process, however, lies in the ability to rapidly fabricate complex micro/nanoscale structures through single-shot exposure of a substrate.
Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.
AbstractMaskless patterning of alumina (A12O3) films of various thicknesses and ceramic (TiC-Al2O3) substrate material was accomplished by using pulsed excimer and Nd:YAG laser systems. Etched structure size was defined through the computer software which also controls the workpiece position and laser operating parameters. Etch profile, materials removal rate and surface roughness was found to be dependent on laser emission wavelength, fluence, pulse rate and relative scan speed. Smoother etching was obtained with the excimer lasers. The etch characteristics are compared with those of the polymeric and metallic materials. Various potential applications of this laser based etching process in microelectronic and micromagnetic device fabrication are identified.
Maskless Patterning of Gallium-Irradiated Superconducting Silicon Using Focused Ion Beam