A high speed optical fiber diameter measurement and characterization system

1977 ◽  
Vol 13 (9) ◽  
pp. 831-832 ◽  
Author(s):  
D. Smithgall ◽  
L. Watkins
1977 ◽  
Vol 16 (9) ◽  
pp. 2395 ◽  
Author(s):  
D. H. Smithgall ◽  
L. S. Watkins ◽  
R. E. Frazee

2003 ◽  
Vol 28 (8) ◽  
pp. 601 ◽  
Author(s):  
J. Jasapara ◽  
E. Monberg ◽  
F. DiMarcello ◽  
J. W. Nicholson

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Mahmoud M. A. Eid ◽  
Ahmed Nabih Zaki Rashed ◽  

AbstractThis study presents high speed optical switching gain based Erbium doped fiber amplifier model. By using the proposed model the optical fiber loss can be minimized. The system is stabilized with the power budget of 25.875 mW a long 75 km as a length of optical fiber in this study can be verified. The modulation rate of 10 Gb/s can be upgrade up to reach 30 Gb/s. The suitable power for the optical transmitter is −2.440 dBm and NRZ modulation code is verified. The receiver sensitivity can be upgraded with the minimum bit error rate and max Q factor are 1.806 e−009 and 5.899.


1993 ◽  
Vol 280 (2) ◽  
pp. 289-298 ◽  
Author(s):  
A.R. Koenig ◽  
R.D. Hamilton ◽  
T.E. Laskowski ◽  
J.R. Olson ◽  
J.F. Gordon ◽  
...  

1991 ◽  
Vol 224 ◽  
Author(s):  
C. Schietinger ◽  
B. Adams ◽  
C. Yarling

AbstractA novel wafer temperature and emissivity measurement technique for rapid thermal processing (RTP) is presented. The ‘Ripple Technique’ takes advantage of heating lamp AC ripple as the signature of the reflected component of the radiation from the wafer surface. This application of Optical Fiber Thermometry (OFT) allows high speed measurement of wafer surface temperatures and emissivities. This ‘Ripple Technique’ is discussed in theoretical and practical terms with wafer data presented. Results of both temperature and emissivity measurements are presented for RTP conditions with bare silicon wafers and filmed wafers.


Sign in / Sign up

Export Citation Format

Share Document