GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth

2011 ◽  
Vol 47 (4) ◽  
pp. 447-454 ◽  
Author(s):  
Michele Moresco ◽  
Francesco Bertazzi ◽  
Enrico Bellotti
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Full Band

Full band Monte Carlo study of high field transport in cubic phase silicon carbide

2003 ◽  
Vol 93 (6) ◽  
pp. 3389-3394 ◽  
Author(s):  
H.-E. Nilsson ◽  
U. Englund ◽  
M. Hjelm ◽  
E. Bellotti ◽  
K. Brennan
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
High Field ◽  
Monte Carlo Study ◽  
Cubic Phase ◽  
Full Band

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H–SiC

2001 ◽  
Vol 184 (1-4) ◽  
pp. 194-198 ◽  
Author(s):  
Mats Hjelm ◽  
Kent Bertilsson ◽  
Hans-Erik Nilsson
Keyword(s):  
Monte Carlo ◽  
Transport Properties ◽  
Monte Carlo Study ◽  
Surface Transport ◽  
Full Band

Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs

2003 ◽  
Vol 2 (2-4) ◽  
pp. 109-112 ◽  
Author(s):  
Hiroshi Nakatsuji ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Hole Transport ◽  
Two Dimensional ◽  
Strained Si ◽  
Full Band

Full band Monte Carlo study of ballistic effects in nanometer-scaled strained P channel Double Gate MOSFETs

2008 ◽  
Vol 5 (1) ◽  
pp. 43-46 ◽  
Author(s):  
K. Huet ◽  
C. Chassat ◽  
D.-P. Nguyen ◽  
S. Galdin-Retailleau ◽  
A. Bournel ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Double Gate ◽  
Full Band

A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC

2000 ◽  
Vol 338-342 ◽  
pp. 765-768 ◽  
Author(s):  
H.-E. Nilsson ◽  
E. Bellotti ◽  
K.F. Brennan ◽  
M. Hjelm
Keyword(s):  
Monte Carlo ◽  
High Field ◽  
Carrier Transport ◽  
Monte Carlo Study ◽  
Full Band

scholarly journals Monte Carlo Study of the Lateral Distribution of Gate Current Density Along the Channel of Submicron LDD MOSFET's

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 301-304 ◽  
Author(s):  
A. Harkar ◽  
R. W. Kelsall ◽  
J. N. Ellis
Keyword(s):  
Monte Carlo ◽  
Spatial Distribution ◽  
Current Density ◽  
Monte Carlo Study ◽  
Hot Electrons ◽  
Gate Current ◽  
Enhancement Technique ◽  
Drain Side ◽  
Full Band ◽  
Monte Carlo Simulator

This paper presents the spatial distribution of hot electrons along the channel of a 0.35 micron MOSFET using the full band pseudopotential Monte Carlo simulator DAMOCLES. The important aspect of this investigation is the implementation of a rigorous statistical enhancement technique along the channel of the device, to probe the hot electrons generated along the channel. Simulations have been carried out for different bias points. The results clearly show that the probability of generating electrons with energies sufficient for injection into the oxide layer is significant only at the drain side of the device. It is also observed that the peak gate current occurs exactly just inside the LDD region coincident with the position of maximum lateral electric field.

A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes

2011 ◽  
Vol 40 (8) ◽  
pp. 1651-1656 ◽  
Author(s):  
Enrico Bellotti ◽  
Michele Moresco ◽  
Francesco Bertazzi
Keyword(s):  
Monte Carlo ◽  
Avalanche Photodiodes ◽  
Monte Carlo Study ◽  
Full Band
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