Reactive Ion Etching of Columnar Nanostructured ${\rm TiO}_{2}$ Thin Films for Modified Relative Humidity Sensor Response Time

2009 ◽  
Vol 9 (12) ◽  
pp. 1979-1986 ◽  
Author(s):  
Martin R. Kupsta ◽  
Michael T. Taschuk ◽  
Michael J. Brett ◽  
Jeremy C. Sit
2019 ◽  
Vol 4 (1) ◽  
pp. 107-114
Author(s):  
P. Zambrozi ◽  
R. C. Teixeira ◽  
F. Fruett

2009 ◽  
Vol 21 (7) ◽  
pp. 441-443 ◽  
Author(s):  
Yinping Miao ◽  
Bo Liu ◽  
Hao Zhang ◽  
Yuan Li ◽  
Haibin Zhou ◽  
...  

2009 ◽  
Author(s):  
Jun Gou ◽  
Zhi-ming Wu ◽  
Hui-ling Tai ◽  
Kai Yuan

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Vol 246 ◽  
pp. 809-818 ◽  
Author(s):  
Memoon Sajid ◽  
Hyun Bum Kim ◽  
Young Jin Yang ◽  
Jeongdai Jo ◽  
Kyung Hyun Choi

2008 ◽  
Author(s):  
Fufei Pang ◽  
Ping Xu ◽  
Min Wang ◽  
Xianglong Zeng ◽  
Zhenyi Chen ◽  
...  

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.


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